BYV26D-TAP Tech Spezifikatioune
Vishay General Semiconductor - Diodes Division - BYV26D-TAP technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay General Semiconductor - Diodes Division - BYV26D-TAP
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay General Semiconductor – Diodes Division | |
Voltage - Viru (Vf) (Max) @ Wann | 2.5 V @ 1 A | |
Voltage - DC Reverse (Vr) (Max) | 800 V | |
Technologie | Avalanche | |
Supplier Device Package | SOD-57 | |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
Serie | - | |
Reverse Recovery Time (trr) | 75 ns |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Package / Case | SOD-57, Axial | |
Package protegéieren | Cut Tape (CT) | |
Operatiounstemperatur - Junction | -55°C ~ 175°C | |
Mounting Type | Through Hole | |
Aktuell - Reverse Leakage @ Vr | 5 µA @ 800 V | |
Aktuell - duerchschnëttlech rektifizéiert (Io) | 1A | |
Capacitance @ Vr, F. | - | |
Basis Produktnummer | BYV26 |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | |
Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
Erreecht Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay General Semiconductor - Diodes Division BYV26D-TAP.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | BYV26D-TAP | BYV26C-TR | BYV26E | BYV26C-TAP |
Hiersteller | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | EIC SEMICONDUCTOR INC. | Vishay General Semiconductor - Diodes Division |
Capacitance @ Vr, F. | - | - | - | - |
Voltage - DC Reverse (Vr) (Max) | 800 V | 600 V | 1000 V | 600 V |
Basis Produktnummer | BYV26 | BYV26 | - | BYV26 |
Package protegéieren | Cut Tape (CT) | Tape & Reel (TR) | Bag | Cut Tape (CT) |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
Operatiounstemperatur - Junction | -55°C ~ 175°C | -55°C ~ 175°C | -65°C ~ 175°C | -55°C ~ 175°C |
Technologie | Avalanche | Avalanche | Avalanche | Avalanche |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Aktuell - duerchschnëttlech rektifizéiert (Io) | 1A | 1A | 1A | 1A |
Supplier Device Package | SOD-57 | SOD-57 | DO-41 | SOD-57 |
Package / Case | SOD-57, Axial | SOD-57, Axial | DO-204AL, DO-41, Axial | SOD-57, Axial |
Voltage - Viru (Vf) (Max) @ Wann | 2.5 V @ 1 A | 2.5 V @ 1 A | 2.5 V @ 1 A | 2.5 V @ 1 A |
Serie | - | - | - | - |
Reverse Recovery Time (trr) | 75 ns | 30 ns | 75 ns | 30 ns |
Aktuell - Reverse Leakage @ Vr | 5 µA @ 800 V | 5 µA @ 600 V | 5 µA @ 1000 V | 5 µA @ 600 V |
Eroflueden BYV26D-TAP PDF DataDhusts an Vishay General Semiconductor - Diodes Division Dokumentatioun fir BYV26D-TAP - Vishay General Semiconductor - Diodes Division.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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