BYT52M-TR Tech Spezifikatioune
Vishay General Semiconductor - Diodes Division - BYT52M-TR technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay General Semiconductor - Diodes Division - BYT52M-TR
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay General Semiconductor – Diodes Division | |
Voltage - Viru (Vf) (Max) @ Wann | 1.3 V @ 1 A | |
Voltage - DC Reverse (Vr) (Max) | 1000 V | |
Technologie | Avalanche | |
Supplier Device Package | SOD-57 | |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
Serie | - | |
Reverse Recovery Time (trr) | 200 ns |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Package / Case | SOD-57, Axial | |
Package protegéieren | Tape & Reel (TR) | |
Operatiounstemperatur - Junction | -55°C ~ 175°C | |
Mounting Type | Through Hole | |
Aktuell - Reverse Leakage @ Vr | 5 µA @ 1000 V | |
Aktuell - duerchschnëttlech rektifizéiert (Io) | 1.4A | |
Capacitance @ Vr, F. | - | |
Basis Produktnummer | BYT52 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay General Semiconductor - Diodes Division BYT52M-TR.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | BYT52M-TR | BYT53D-TAP | BYT52A-TAP | BYT52K-TAP |
Hiersteller | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division |
Aktuell - Reverse Leakage @ Vr | 5 µA @ 1000 V | 5 µA @ 200 V | 5 µA @ 50 V | 5 µA @ 800 V |
Package protegéieren | Tape & Reel (TR) | Tape & Box (TB) | Tape & Box (TB) | Tape & Box (TB) |
Supplier Device Package | SOD-57 | SOD-57 | SOD-57 | SOD-57 |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
Capacitance @ Vr, F. | - | - | - | - |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Technologie | Avalanche | Avalanche | Avalanche | Avalanche |
Voltage - Viru (Vf) (Max) @ Wann | 1.3 V @ 1 A | 1.1 V @ 1 A | 1.3 V @ 1 A | 1.3 V @ 1 A |
Aktuell - duerchschnëttlech rektifizéiert (Io) | 1.4A | 1.9A | 1.4A | 1.4A |
Operatiounstemperatur - Junction | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C |
Serie | - | - | - | - |
Voltage - DC Reverse (Vr) (Max) | 1000 V | 200 V | 50 V | 800 V |
Package / Case | SOD-57, Axial | SOD-57, Axial | SOD-57, Axial | SOD-57, Axial |
Basis Produktnummer | BYT52 | BYT53 | BYT52 | BYT52 |
Reverse Recovery Time (trr) | 200 ns | 50 ns | 200 ns | 200 ns |
Eroflueden BYT52M-TR PDF DataDhusts an Vishay General Semiconductor - Diodes Division Dokumentatioun fir BYT52M-TR - Vishay General Semiconductor - Diodes Division.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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