BYM10-100-E3/96 Tech Spezifikatioune
Vishay General Semiconductor - Diodes Division - BYM10-100-E3/96 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay General Semiconductor - Diodes Division - BYM10-100-E3/96
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay General Semiconductor – Diodes Division | |
Voltage - Viru (Vf) (Max) @ Wann | 1.1 V @ 1 A | |
Voltage - DC Reverse (Vr) (Max) | 100 V | |
Technologie | Standard | |
Supplier Device Package | DO-213AB | |
Speed | Standard Recovery >500ns, > 200mA (Io) | |
Serie | SUPERECTIFIER® | |
Package / Case | DO-213AB, MELF (Glass) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Package protegéieren | Tape & Reel (TR) | |
Operatiounstemperatur - Junction | -65°C ~ 175°C | |
Mounting Type | Surface Mount | |
Aktuell - Reverse Leakage @ Vr | 10 µA @ 100 V | |
Aktuell - duerchschnëttlech rektifizéiert (Io) | 1A | |
Capacitance @ Vr, F. | 8pF @ 4V, 1MHz | |
Basis Produktnummer | BYM10 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay General Semiconductor - Diodes Division BYM10-100-E3/96.
Produktiounsattriff | ||||
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Part Number | BYM10-100-E3/96 | BYM10-100-E3/97 | BYM07-100-E3/83 | BYM10-1000-E3/97 |
Hiersteller | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Serie | SUPERECTIFIER® | SUPERECTIFIER® | SUPERECTIFIER® | SUPERECTIFIER® |
Aktuell - Reverse Leakage @ Vr | 10 µA @ 100 V | 10 µA @ 100 V | 5 µA @ 100 V | 10 µA @ 1000 V |
Package / Case | DO-213AB, MELF (Glass) | DO-213AB, MELF (Glass) | DO-213AA (Glass) | DO-213AB, MELF (Glass) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Supplier Device Package | DO-213AB | DO-213AB | DO-213AA (GL34) | DO-213AB |
Voltage - Viru (Vf) (Max) @ Wann | 1.1 V @ 1 A | 1.1 V @ 1 A | 1.25 V @ 500 mA | 1.2 V @ 1 A |
Basis Produktnummer | BYM10 | BYM10 | BYM07 | BYM10 |
Technologie | Standard | Standard | Standard | Standard |
Aktuell - duerchschnëttlech rektifizéiert (Io) | 1A | 1A | 500mA | 1A |
Operatiounstemperatur - Junction | -65°C ~ 175°C | -65°C ~ 175°C | -65°C ~ 175°C | -65°C ~ 175°C |
Capacitance @ Vr, F. | 8pF @ 4V, 1MHz | 8pF @ 4V, 1MHz | 7pF @ 4V, 1MHz | 8pF @ 4V, 1MHz |
Voltage - DC Reverse (Vr) (Max) | 100 V | 100 V | 100 V | 1000 V |
Speed | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) |
Eroflueden BYM10-100-E3/96 PDF DataDhusts an Vishay General Semiconductor - Diodes Division Dokumentatioun fir BYM10-100-E3/96 - Vishay General Semiconductor - Diodes Division.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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