BYG10G-E3/TR Tech Spezifikatioune
Vishay General Semiconductor - Diodes Division - BYG10G-E3/TR technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay General Semiconductor - Diodes Division - BYG10G-E3/TR
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay General Semiconductor – Diodes Division | |
Voltage - Viru (Vf) (Max) @ Wann | 1.15 V @ 1.5 A | |
Voltage - DC Reverse (Vr) (Max) | 400 V | |
Technologie | Avalanche | |
Supplier Device Package | DO-214AC (SMA) | |
Speed | Standard Recovery >500ns, > 200mA (Io) | |
Serie | - | |
Reverse Recovery Time (trr) | 4 µs |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Package / Case | DO-214AC, SMA | |
Package protegéieren | Tape & Reel (TR) | |
Operatiounstemperatur - Junction | -55°C ~ 150°C | |
Mounting Type | Surface Mount | |
Aktuell - Reverse Leakage @ Vr | 1 µA @ 400 V | |
Aktuell - duerchschnëttlech rektifizéiert (Io) | 1.5A | |
Capacitance @ Vr, F. | - | |
Basis Produktnummer | BYG10 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay General Semiconductor - Diodes Division BYG10G-E3/TR.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | BYG10G-E3/TR | BYG10D-E3/TR | BYG10J-E3/TR3 | BYG10J-E3/TR |
Hiersteller | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division |
Package / Case | DO-214AC, SMA | DO-214AC, SMA | DO-214AC, SMA | DO-214AC, SMA |
Capacitance @ Vr, F. | - | - | - | - |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Aktuell - Reverse Leakage @ Vr | 1 µA @ 400 V | 1 µA @ 200 V | 1 µA @ 600 V | 1 µA @ 600 V |
Voltage - Viru (Vf) (Max) @ Wann | 1.15 V @ 1.5 A | 1.15 V @ 1.5 A | 1.15 V @ 1.5 A | 1.15 V @ 1.5 A |
Speed | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) |
Voltage - DC Reverse (Vr) (Max) | 400 V | 200 V | 600 V | 600 V |
Reverse Recovery Time (trr) | 4 µs | 4 µs | 4 µs | 4 µs |
Serie | - | - | - | - |
Supplier Device Package | DO-214AC (SMA) | DO-214AC (SMA) | DO-214AC (SMA) | DO-214AC (SMA) |
Aktuell - duerchschnëttlech rektifizéiert (Io) | 1.5A | 1.5A | 1.5A | 1.5A |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Basis Produktnummer | BYG10 | BYG10 | BYG10 | BYG10 |
Operatiounstemperatur - Junction | -55°C ~ 150°C | -55°C ~ 150°C | -55°C ~ 150°C | -55°C ~ 150°C |
Technologie | Avalanche | Avalanche | Avalanche | Avalanche |
Eroflueden BYG10G-E3/TR PDF DataDhusts an Vishay General Semiconductor - Diodes Division Dokumentatioun fir BYG10G-E3/TR - Vishay General Semiconductor - Diodes Division.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.