BAS16-E3-08 Tech Spezifikatioune
Vishay General Semiconductor - Diodes Division - BAS16-E3-08 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay General Semiconductor - Diodes Division - BAS16-E3-08
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay General Semiconductor – Diodes Division | |
Voltage - Viru (Vf) (Max) @ Wann | 1.25 V @ 150 mA | |
Voltage - DC Reverse (Vr) (Max) | 75 V | |
Technologie | Standard | |
Supplier Device Package | SOT-23-3 | |
Speed | Small Signal =< 200mA (Io), Any Speed | |
Serie | - | |
Reverse Recovery Time (trr) | 6 ns |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Package / Case | TO-236-3, SC-59, SOT-23-3 | |
Package protegéieren | Tape & Reel (TR) | |
Operatiounstemperatur - Junction | -55°C ~ 150°C | |
Mounting Type | Surface Mount | |
Aktuell - Reverse Leakage @ Vr | 1 µA @ 75 V | |
Aktuell - duerchschnëttlech rektifizéiert (Io) | 150mA | |
Capacitance @ Vr, F. | 4pF @ 0V, 1MHz | |
Basis Produktnummer | BAS16 |
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Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | BAS16-E3-08 | BAS16-03WE6327 | BAS16-TP | BAS16-7-G |
Hiersteller | Vishay General Semiconductor - Diodes Division | Infineon Technologies | Micro Commercial Co | Diodes Incorporated |
Voltage - DC Reverse (Vr) (Max) | 75 V | 80 V | 100 V | - |
Serie | - | BAS16 | - | * |
Aktuell - duerchschnëttlech rektifizéiert (Io) | 150mA | 250mA | 300mA | - |
Reverse Recovery Time (trr) | 6 ns | 4 ns | 4 ns | - |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | - |
Package protegéieren | Tape & Reel (TR) | Bulk | Tape & Reel (TR) | Tape & Reel (TR) |
Technologie | Standard | Standard | Standard | - |
Supplier Device Package | SOT-23-3 | PG-SOD323-2-1 | SOT-23 | - |
Package / Case | TO-236-3, SC-59, SOT-23-3 | SC-76, SOD-323 | TO-236-3, SC-59, SOT-23-3 | - |
Capacitance @ Vr, F. | 4pF @ 0V, 1MHz | 2pF @ 0V, 1MHz | 2pF @ 0V, 1MHz | - |
Operatiounstemperatur - Junction | -55°C ~ 150°C | 150°C | -55°C ~ 150°C | - |
Speed | Small Signal =< 200mA (Io), Any Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | - |
Basis Produktnummer | BAS16 | BAS16 | BAS16 | BAS16 |
Voltage - Viru (Vf) (Max) @ Wann | 1.25 V @ 150 mA | 1.25 V @ 150 mA | 1.25 V @ 100 mA | - |
Aktuell - Reverse Leakage @ Vr | 1 µA @ 75 V | 1 µA @ 75 V | 1 µA @ 75 V | - |
Eroflueden BAS16-E3-08 PDF DataDhusts an Vishay General Semiconductor - Diodes Division Dokumentatioun fir BAS16-E3-08 - Vishay General Semiconductor - Diodes Division.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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