80EPF06 Tech Spezifikatioune
Vishay General Semiconductor - Diodes Division - 80EPF06 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay General Semiconductor - Diodes Division - 80EPF06
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay General Semiconductor – Diodes Division | |
Voltage - Viru (Vf) (Max) @ Wann | 1.25 V @ 80 A | |
Voltage - DC Reverse (Vr) (Max) | 600 V | |
Technologie | Standard | |
Supplier Device Package | TO-247AC | |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
Serie | - | |
Reverse Recovery Time (trr) | 190 ns |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Package / Case | TO-247-3 | |
Package protegéieren | Tube | |
Operatiounstemperatur - Junction | -65°C ~ 175°C | |
Mounting Type | Through Hole | |
Aktuell - Reverse Leakage @ Vr | 100 µA @ 600 V | |
Aktuell - duerchschnëttlech rektifizéiert (Io) | 80A | |
Capacitance @ Vr, F. | - | |
Basis Produktnummer | 80EPF06 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay General Semiconductor - Diodes Division 80EPF06.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | 80EPF06 | 30WQ06FN | SBRT25U60SLP-13 | 80EPS12 |
Hiersteller | Vishay General Semiconductor - Diodes Division | SMC Diode Solutions | Diodes Incorporated | Vishay General Semiconductor - Diodes Division |
Basis Produktnummer | 80EPF06 | 30WQ | SBRT25 | 80EPS12 |
Technologie | Standard | Schottky | Super Barrier | Standard |
Voltage - Viru (Vf) (Max) @ Wann | 1.25 V @ 80 A | 610 mV @ 3 A | 550 mV @ 25 A | 1.17 V @ 80 A |
Capacitance @ Vr, F. | - | 145pF @ 5V, 1MHz | - | - |
Aktuell - Reverse Leakage @ Vr | 100 µA @ 600 V | 2 mA @ 60 V | 400 µA @ 60 V | 100 µA @ 1200 V |
Voltage - DC Reverse (Vr) (Max) | 600 V | 60 V | 60 V | 1200 V |
Reverse Recovery Time (trr) | 190 ns | - | - | - |
Package / Case | TO-247-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 8-PowerTDFN | TO-247-3 |
Aktuell - duerchschnëttlech rektifizéiert (Io) | 80A | - | 25A | 80A |
Mounting Type | Through Hole | Surface Mount | Surface Mount | Through Hole |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) |
Operatiounstemperatur - Junction | -65°C ~ 175°C | -40°C ~ 150°C | -55°C ~ 150°C | -40°C ~ 150°C |
Serie | - | - | TrenchSBR | - |
Package protegéieren | Tube | Tape & Reel (TR) | Tape & Reel (TR) | Tube |
Supplier Device Package | TO-247AC | DPAK | PowerDI5060-8 | TO-247AC |
Eroflueden 80EPF06 PDF DataDhusts an Vishay General Semiconductor - Diodes Division Dokumentatioun fir 80EPF06 - Vishay General Semiconductor - Diodes Division.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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