1N5230B-TAP Tech Spezifikatioune
Vishay General Semiconductor - Diodes Division - 1N5230B-TAP technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay General Semiconductor - Diodes Division - 1N5230B-TAP
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay General Semiconductor – Diodes Division | |
Voltage - Zener (nom) (Vz) | 4.7 V | |
Voltage - Viru (Vf) (Max) @ Wann | 1.1 V @ 200 mA | |
Toleranz | ±5% | |
Supplier Device Package | DO-35 (DO-204AH) | |
Serie | Automotive, AEC-Q101 | |
Power - Max | 500 mW |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Package / Case | DO-204AH, DO-35, Axial | |
Package protegéieren | Cut Tape (CT) | |
Operatioun Temperatur | 175°C | |
Mounting Type | Through Hole | |
Impedanz (Max) (Zzt) | 19 Ohms | |
Aktuell - Reverse Leakage @ Vr | 5 µA @ 2 V | |
Basis Produktnummer | 1N5230 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay General Semiconductor - Diodes Division 1N5230B-TAP.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | 1N5230B-TAP | 1N5230B | 1N5230B | 1N5230BTR |
Hiersteller | Vishay General Semiconductor - Diodes Division | Fairchild Semiconductor | Microchip Technology | Fairchild Semiconductor |
Toleranz | ±5% | ±5% | ±5% | ±5% |
Operatioun Temperatur | 175°C | -65°C ~ 200°C | -65°C ~ 175°C (TJ) | -65°C ~ 200°C |
Aktuell - Reverse Leakage @ Vr | 5 µA @ 2 V | 5 µA @ 2 V | 50 µA @ 2 V | 2 µA @ 1 V |
Voltage - Viru (Vf) (Max) @ Wann | 1.1 V @ 200 mA | - | 1.5 V @ 200 mA | 1.2 V @ 200 mA |
Power - Max | 500 mW | 500 mW | 500 mW | 500 mW |
Basis Produktnummer | 1N5230 | - | 1N5230 | - |
Voltage - Zener (nom) (Vz) | 4.7 V | 4.7 V | 4.7 V | 4.7 V |
Package protegéieren | Cut Tape (CT) | Bulk | Bulk | Bulk |
Supplier Device Package | DO-35 (DO-204AH) | - | DO-35 (DO-204AH) | DO-35 (DO-204AH) |
Package / Case | DO-204AH, DO-35, Axial | DO-204AH, DO-35, Axial | DO-204AH, DO-35, Axial | DO-204AH, DO-35, Axial |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Serie | Automotive, AEC-Q101 | - | - | - |
Impedanz (Max) (Zzt) | 19 Ohms | 19 Ohms | 19 Ohms | 19 Ohms |
Eroflueden 1N5230B-TAP PDF DataDhusts an Vishay General Semiconductor - Diodes Division Dokumentatioun fir 1N5230B-TAP - Vishay General Semiconductor - Diodes Division.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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