TPW2900ENH,L1Q Tech Spezifikatioune
Toshiba Semiconductor and Storage - TPW2900ENH,L1Q technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Toshiba Semiconductor and Storage - TPW2900ENH,L1Q
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | TAEC Product (Toshiba Electronic Devices and Storage Corporation) | |
| Vgs (th) (Max) @ Id | 4V @ 1mA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-DSOP Advance | |
| Serie | U-MOSVIII-H | |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 16.5A, 10V | |
| Power Dissipation (Max) | 800mW (Ta), 142W (Tc) | |
| Package / Case | 8-PowerWDFN | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | 150°C | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 100 V | |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 200 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 33A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Toshiba Semiconductor and Storage TPW2900ENH,L1Q.
| Produktiounsattriff |  |
|
 |
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|---|---|---|---|---|
| Part Number | TPW2900ENH,L1Q | TPW3257-SO3R | TPW2R508NH | TPW4052-SR |
| Hiersteller | Toshiba Semiconductor and Storage | 3PEAK | TOSHIBA | 3PEAK |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | - | - | - |
| Package protegéieren | Tape & Reel (TR) | - | - | - |
| Mounting Type | Surface Mount | - | - | - |
| Supplier Device Package | 8-DSOP Advance | - | - | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 33A (Tc) | - | - | - |
| FET Typ | N-Channel | - | - | - |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 16.5A, 10V | - | - | - |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V | - | - | - |
| Vgs (Max) | ±20V | - | - | - |
| Technologie | MOSFET (Metal Oxide) | - | - | - |
| Vgs (th) (Max) @ Id | 4V @ 1mA | - | - | - |
| Entworf fir Source Voltage (Vdss) | 200 V | - | - | - |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 800mW (Ta), 142W (Tc) | - | - | - |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 100 V | - | - | - |
| Serie | U-MOSVIII-H | - | - | - |
| Package / Case | 8-PowerWDFN | - | - | - |
| Operatioun Temperatur | 150°C | - | - | - |
TPW3257-SO3R3PEAKTPW2R508NHTOSHIBATPW4052-SR3PEAKTPW2R508NHL1Q(M)TAEC Product (Toshiba Electronic Devices and StoraTPW3157A-CR3PEAKTPW1R306PLTOSHIBATPW4157-CR3PEAKTPW4R50ANHTAEC Product (Toshiba Electronic Devices and StoraTPW3121-SC6R-S3PEAKTPW4053-SR3PEAKTPW3221-VR3peakTPW1500CNH.L1QCMTAEC Product (Toshiba Electronic Devices and StoraTPW3R70APL.L1QTAEC Product (Toshiba Electronic Devices and StoraTPW1500CNH.L1Q(M)TAEC Product (Toshiba Electronic Devices and StoraTPW4R008NHTOSHIBATPW4051-SR3PEAKTPW4051-TR3-PEAKTPW4052-TR3-PEAK| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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