TK5A65W,S5X Tech Spezifikatioune
Toshiba Semiconductor and Storage - TK5A65W,S5X technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Toshiba Semiconductor and Storage - TK5A65W,S5X
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | TAEC Product (Toshiba Electronic Devices and Storage Corporation) | |
| Vgs (th) (Max) @ Id | 3.5V @ 170µA | |
| Vgs (Max) | ±30V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220SIS | |
| Serie | DTMOSIV | |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2.6A, 10V | |
| Power Dissipation (Max) | 30W (Tc) | |
| Package / Case | TO-220-3 Full Pack | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 300 V | |
| Gate Charge (Qg) (Max) @ Vgs | 10.5 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 650 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5.2A (Ta) | |
| Basis Produktnummer | TK5A65 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Toshiba Semiconductor and Storage TK5A65W,S5X.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | TK5A65W,S5X | TK5P50D(T6RSS-Q) | TK5A65D(STA4) | TK5A80ES4X(S) |
| Hiersteller | Toshiba Semiconductor and Storage | Toshiba Semiconductor and Storage | TAEC Product (Toshiba Electronic Devices and Stora | TAEC Product (Toshiba Electronic Devices and Stora |
| Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 300 V | 490 pF @ 25 V | - | - |
| Serie | DTMOSIV | - | - | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5.2A (Ta) | 5A (Ta) | - | - |
| Package / Case | TO-220-3 Full Pack | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | - |
| FET Feature | - | - | - | - |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | - | - |
| Package protegéieren | Tube | Tape & Reel (TR) | - | - |
| Gate Charge (Qg) (Max) @ Vgs | 10.5 nC @ 10 V | 11 nC @ 10 V | - | - |
| Mounting Type | Through Hole | Surface Mount | - | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - | - |
| Power Dissipation (Max) | 30W (Tc) | 80W (Tc) | - | - |
| Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | - | - |
| Supplier Device Package | TO-220SIS | D-Pak | - | - |
| Basis Produktnummer | TK5A65 | TK5P50 | - | - |
| Vgs (Max) | ±30V | ±30V | - | - |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2.6A, 10V | 1.5Ohm @ 2.5A, 10V | - | - |
| Vgs (th) (Max) @ Id | 3.5V @ 170µA | 4.4V @ 1mA | - | - |
| Entworf fir Source Voltage (Vdss) | 650 V | 500 V | - | - |
| FET Typ | N-Channel | N-Channel | - | - |
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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