TK13P25D,RQ Tech Spezifikatioune
Toshiba Semiconductor and Storage - TK13P25D,RQ technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Toshiba Semiconductor and Storage - TK13P25D,RQ
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | TAEC Product (Toshiba Electronic Devices and Storage Corporation) | |
| Vgs (th) (Max) @ Id | 3.5V @ 1mA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | DPAK | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 6.5A, 10V | |
| Power Dissipation (Max) | 96W (Tc) | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | 150°C | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 100 V | |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 250 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 13A (Ta) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Toshiba Semiconductor and Storage TK13P25D,RQ.
| Produktiounsattriff |  |
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|
 |
|---|---|---|---|---|
| Part Number | TK13P25D,RQ | TK13P25D.RQ | TK13H90A1 | TK140V |
| Hiersteller | Toshiba Semiconductor and Storage | TAEC Product (Toshiba Electronic Devices and Stora | TAEC Product (Toshiba Electronic Devices and Stora | STMicroelectronics |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 6.5A, 10V | - | - | - |
| Vgs (th) (Max) @ Id | 3.5V @ 1mA | - | - | - |
| Vgs (Max) | ±20V | - | - | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 13A (Ta) | - | - | - |
| Package protegéieren | Tape & Reel (TR) | - | - | - |
| Entworf fir Source Voltage (Vdss) | 250 V | - | - | - |
| Operatioun Temperatur | 150°C | - | - | - |
| Technologie | MOSFET (Metal Oxide) | - | - | - |
| Mounting Type | Surface Mount | - | - | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 100 V | - | - | - |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | - | - | - |
| FET Typ | N-Channel | - | - | - |
| Serie | - | - | - | - |
| Power Dissipation (Max) | 96W (Tc) | - | - | - |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V | - | - | - |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | - | - |
| Supplier Device Package | DPAK | - | - | - |
| FET Feature | - | - | - | - |
TK13P25D.RQTAEC Product (Toshiba Electronic Devices and StoraTK13H90A1TAEC Product (Toshiba Electronic Devices and StoraTK140VSTMicroelectronicsIGBT ModuleTK13E25DTAEC Product (Toshiba Electronic Devices and StoraTK13E25D.S1XTAEC Product (Toshiba Electronic Devices and StoraTK1410STMicroelectronicsIGBT ModuleTK13H90A1(Q)TAEC Product (Toshiba Electronic Devices and StoraTK1406STMicroelectronicsIGBT ModuleTK1404STMicroelectronicsIGBT ModuleTK13H90A1QTOSTK13E60WTAEC Product (Toshiba Electronic Devices and StoraTK13P25DTAEC Product (Toshiba Electronic Devices and StoraTK13P25D RQTAEC Product (Toshiba Electronic Devices and StoraTK13P25DRQTOSTK1412STMicroelectronicsIGBT ModuleTK13P60DTAEC Product (Toshiba Electronic Devices and Stora
TK14023M (TC)COLLEGE DORM TAPE KITTK13J65UTAEC Product (Toshiba Electronic Devices and Stora| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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