SSM6J503NU,LF Tech Spezifikatioune
Toshiba Semiconductor and Storage - SSM6J503NU,LF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Toshiba Semiconductor and Storage - SSM6J503NU,LF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | TAEC Product (Toshiba Electronic Devices and Storage Corporation) | |
Vgs (th) (Max) @ Id | 1V @ 1mA | |
Vgs (Max) | ±8V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 6-UDFNB (2x2) | |
Serie | U-MOSVI | |
Rds On (Max) @ Id, Vgs | 32.4mOhm @ 3A, 4.5V | |
Power Dissipation (Max) | 1W (Ta) | |
Package / Case | 6-WDFN Exposed Pad | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 840 pF @ 10 V | |
Gate Charge (Qg) (Max) @ Vgs | 12.8 nC @ 10 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 1.5V, 4.5V | |
Entworf fir Source Voltage (Vdss) | 20 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6A (Ta) | |
Basis Produktnummer | SSM6J503 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Toshiba Semiconductor and Storage SSM6J503NU,LF.
Produktiounsattriff | ||||
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Part Number | SSM6J503NU,LF | SSM6J505NU,LF | SSM6J501NU.LF | SSM6J501NV |
Hiersteller | Toshiba Semiconductor and Storage | Toshiba Semiconductor and Storage | TAEC Product (Toshiba Electronic Devices and Stora | TAEC Product (Toshiba Electronic Devices and Stora |
FET Feature | - | - | - | - |
Rds On (Max) @ Id, Vgs | 32.4mOhm @ 3A, 4.5V | 12mOhm @ 4A, 4.5V | - | - |
Vgs (th) (Max) @ Id | 1V @ 1mA | 1V @ 1mA | - | - |
Gate Charge (Qg) (Max) @ Vgs | 12.8 nC @ 10 V | 37.6 nC @ 4.5 V | - | - |
FET Typ | P-Channel | P-Channel | - | - |
Package / Case | 6-WDFN Exposed Pad | 6-WDFN Exposed Pad | - | - |
Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | - | - |
Entworf fir Source Voltage (Vdss) | 20 V | 12 V | - | - |
Fuert Volt (Max Rds On, Min Rds On) | 1.5V, 4.5V | 1.2V, 4.5V | - | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - | - |
Input Capacitance (Ciss) (Max) @ Vds | 840 pF @ 10 V | 2700 pF @ 10 V | - | - |
Serie | U-MOSVI | U-MOSVI | - | - |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | - | - |
Basis Produktnummer | SSM6J503 | SSM6J505 | - | - |
Supplier Device Package | 6-UDFNB (2x2) | 6-UDFNB (2x2) | - | - |
Power Dissipation (Max) | 1W (Ta) | 1.25W (Ta) | - | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6A (Ta) | 12A (Ta) | - | - |
Mounting Type | Surface Mount | Surface Mount | - | - |
Vgs (Max) | ±8V | ±6V | - | - |
Eroflueden SSM6J503NU,LF PDF DataDhusts an Toshiba Semiconductor and Storage Dokumentatioun fir SSM6J503NU,LF - Toshiba Semiconductor and Storage.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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