SSM3K35CTC,L3F Tech Spezifikatioune
Toshiba Semiconductor and Storage - SSM3K35CTC,L3F technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Toshiba Semiconductor and Storage - SSM3K35CTC,L3F
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | TAEC Product (Toshiba Electronic Devices and Storage Corporation) | |
| Vgs (th) (Max) @ Id | 1V @ 100µA | |
| Vgs (Max) | ±10V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | CST3C | |
| Serie | U-MOSIII | |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 150mA, 4.5V | |
| Power Dissipation (Max) | 500mW (Ta) | |
| Package / Case | SC-101, SOT-883 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 36 pF @ 10 V | |
| Gate Charge (Qg) (Max) @ Vgs | 0.34 nC @ 4.5 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 1.2V, 4.5V | |
| Entworf fir Source Voltage (Vdss) | 20 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 250mA (Ta) | |
| Basis Produktnummer | SSM3K35 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Toshiba Semiconductor and Storage SSM3K35CTC,L3F.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | SSM3K35CTC,L3F | SSM3K35CT | SSM3K35MFV.L3F | SSM3K357R |
| Hiersteller | Toshiba Semiconductor and Storage | TAEC Product (Toshiba Electronic Devices and Stora | TAEC Product (Toshiba Electronic Devices and Stora | TAEC Product (Toshiba Electronic Devices and Stora |
| Vgs (th) (Max) @ Id | 1V @ 100µA | - | - | - |
| Package / Case | SC-101, SOT-883 | - | - | - |
| Basis Produktnummer | SSM3K35 | - | - | - |
| Package protegéieren | Tape & Reel (TR) | - | - | - |
| FET Feature | - | - | - | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 250mA (Ta) | - | - | - |
| Mounting Type | Surface Mount | - | - | - |
| Vgs (Max) | ±10V | - | - | - |
| Input Capacitance (Ciss) (Max) @ Vds | 36 pF @ 10 V | - | - | - |
| Fuert Volt (Max Rds On, Min Rds On) | 1.2V, 4.5V | - | - | - |
| FET Typ | N-Channel | - | - | - |
| Supplier Device Package | CST3C | - | - | - |
| Gate Charge (Qg) (Max) @ Vgs | 0.34 nC @ 4.5 V | - | - | - |
| Power Dissipation (Max) | 500mW (Ta) | - | - | - |
| Technologie | MOSFET (Metal Oxide) | - | - | - |
| Operatioun Temperatur | 150°C (TJ) | - | - | - |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 150mA, 4.5V | - | - | - |
| Entworf fir Source Voltage (Vdss) | 20 V | - | - | - |
| Serie | U-MOSIII | - | - | - |
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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