SSM3J56ACT,L3F Tech Spezifikatioune
Toshiba Semiconductor and Storage - SSM3J56ACT,L3F technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Toshiba Semiconductor and Storage - SSM3J56ACT,L3F
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | TAEC Product (Toshiba Electronic Devices and Storage Corporation) | |
Vgs (th) (Max) @ Id | 1V @ 1mA | |
Vgs (Max) | ±8V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | CST3 | |
Serie | U-MOSVI | |
Rds On (Max) @ Id, Vgs | 390mOhm @ 800mA, 4.5V | |
Power Dissipation (Max) | 500mW (Ta) | |
Package / Case | SC-101, SOT-883 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 150°C | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 100 pF @ 10 V | |
Gate Charge (Qg) (Max) @ Vgs | 1.6 nC @ 4.5 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 1.2V, 4.5V | |
Entworf fir Source Voltage (Vdss) | 20 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.4A (Ta) | |
Basis Produktnummer | SSM3J56 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Toshiba Semiconductor and Storage SSM3J56ACT,L3F.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | SSM3J56ACT,L3F | SSM3J46CTB(TPL3) | SSM3J56ACT.L3GOF(T) | SSM3J377R |
Hiersteller | Toshiba Semiconductor and Storage | Toshiba Semiconductor and Storage | TAEC Product (Toshiba Electronic Devices and Stora | TAEC Product (Toshiba Electronic Devices and Stora |
Operatioun Temperatur | 150°C | 150°C (TJ) | - | - |
Rds On (Max) @ Id, Vgs | 390mOhm @ 800mA, 4.5V | 103mOhm @ 1.5A, 4.5V | - | - |
Serie | U-MOSVI | U-MOSVI | - | - |
Power Dissipation (Max) | 500mW (Ta) | - | - | - |
FET Typ | P-Channel | P-Channel | - | - |
Supplier Device Package | CST3 | CST3B | - | - |
Package / Case | SC-101, SOT-883 | 3-SMD, No Lead | - | - |
Entworf fir Source Voltage (Vdss) | 20 V | 20 V | - | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - | - |
Vgs (Max) | ±8V | ±8V | - | - |
Gate Charge (Qg) (Max) @ Vgs | 1.6 nC @ 4.5 V | 4.7 nC @ 4.5 V | - | - |
Fuert Volt (Max Rds On, Min Rds On) | 1.2V, 4.5V | 1.5V, 4.5V | - | - |
FET Feature | - | - | - | - |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | - | - |
Mounting Type | Surface Mount | Surface Mount | - | - |
Vgs (th) (Max) @ Id | 1V @ 1mA | 1V @ 1mA | - | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.4A (Ta) | 2A (Ta) | - | - |
Basis Produktnummer | SSM3J56 | SSM3J46 | - | - |
Input Capacitance (Ciss) (Max) @ Vds | 100 pF @ 10 V | 290 pF @ 10 V | - | - |
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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