TSM650P02CX RFG Tech Spezifikatioune
Taiwan Semiconductor Corporation - TSM650P02CX RFG technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Taiwan Semiconductor Corporation - TSM650P02CX RFG
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Taiwan Semiconductor | |
Vgs (th) (Max) @ Id | 800mV @ 250µA | |
Vgs (Max) | ±10V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | SOT-23 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 65mOhm @ 3A, 4.5V | |
Power Dissipation (Max) | 1.56W (Tc) | |
Package / Case | TO-236-3, SC-59, SOT-23-3 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 515 pF @ 10 V | |
Gate Charge (Qg) (Max) @ Vgs | 5.1 nC @ 4.5 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
Entworf fir Source Voltage (Vdss) | 20 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.1A (Tc) | |
Basis Produktnummer | TSM650 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Taiwan Semiconductor Corporation TSM650P02CX RFG.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | TSM650P02CX RFG | TSM650P03CX | TSM680P06CP ROG | TSM650P03CX RFG |
Hiersteller | Taiwan Semiconductor Corporation | Taiwan Semiconductor Corporation | Taiwan Semiconductor Corporation | Taiwan Semiconductor Corporation |
Vgs (Max) | ±10V | ±12V | ±20V | ±12V |
Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SOT-23 | SOT-23 | TO-252, (D-Pak) | SOT-23 |
Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) |
Input Capacitance (Ciss) (Max) @ Vds | 515 pF @ 10 V | 810 pF @ 15 V | 870 pF @ 30 V | 810 pF @ 15 V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Serie | - | - | - | - |
Entworf fir Source Voltage (Vdss) | 20 V | 30 V | 60 V | 30 V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Basis Produktnummer | TSM650 | TSM650 | TSM680 | TSM650 |
Power Dissipation (Max) | 1.56W (Tc) | 1.56W (Tc) | 20W (Tc) | 1.56W (Tc) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.1A (Tc) | 4.1A (Tc) | 18A (Tc) | 4.1A (Tc) |
Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | 2.5V, 10V | 4.5V, 10V | 2.5V, 10V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Gate Charge (Qg) (Max) @ Vgs | 5.1 nC @ 4.5 V | 8 nC @ 4.5 V | 16.4 nC @ 10 V | 6.4 nC @ 4.5 V |
Rds On (Max) @ Id, Vgs | 65mOhm @ 3A, 4.5V | 65mOhm @ 4A, 10V | 68mOhm @ 6A, 10V | 65mOhm @ 4A, 10V |
Vgs (th) (Max) @ Id | 800mV @ 250µA | 900mV @ 250µA | 2.2V @ 250µA | 900mV @ 250µA |
FET Typ | P-Channel | P-Channel | P-Channel | P-Channel |
FET Feature | - | - | - | - |
Eroflueden TSM650P02CX RFG PDF DataDhusts an Taiwan Semiconductor Corporation Dokumentatioun fir TSM650P02CX RFG - Taiwan Semiconductor Corporation.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
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Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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