TSM60N600CH C5G Tech Spezifikatioune
Taiwan Semiconductor Corporation - TSM60N600CH C5G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Taiwan Semiconductor Corporation - TSM60N600CH C5G
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Taiwan Semiconductor | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-251 (IPAK) | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 600mOhm @ 4A, 10V | |
Power Dissipation (Max) | 83W (Tc) | |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 743 pF @ 100 V | |
Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 600 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8A (Tc) | |
Basis Produktnummer | TSM60 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Taiwan Semiconductor Corporation TSM60N600CH C5G.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | TSM60N600CH C5G | TSM60NB600CF | TSM650P02CX | TSM650N15CS |
Hiersteller | Taiwan Semiconductor Corporation | Taiwan Semiconductor Corporation | Taiwan Semiconductor Corporation | Taiwan Semiconductor Corporation |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8A (Tc) | 8A (Tc) | 4.1A (Tc) | 4A (Ta), 9A (Tc) |
FET Typ | N-Channel | N-Channel | P-Channel | N-Channel |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 1.8V, 4.5V | 6V, 10V |
FET Feature | - | - | - | - |
Supplier Device Package | TO-251 (IPAK) | ITO-220S | SOT-23 | 8-SOP |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) | -55°C ~ 150°C (TJ) |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 0.8V @ 250µA | 4V @ 250µA |
Vgs (Max) | ±30V | ±30V | ±10V | ±20V |
Mounting Type | Through Hole | Through Hole | Surface Mount | Surface Mount |
Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V | 16 nC @ 10 V | 6.4 nC @ 4.5 V | 37 nC @ 10 V |
Basis Produktnummer | TSM60 | TSM60 | TSM650 | TSM650 |
Power Dissipation (Max) | 83W (Tc) | 41.7W (Tc) | 1.56W (Tc) | 2.2W (Ta), 12.5W (Tc) |
Rds On (Max) @ Id, Vgs | 600mOhm @ 4A, 10V | 600mOhm @ 1.7A, 10V | 65mOhm @ 3A, 4.5V | 65mOhm @ 4A, 10V |
Serie | - | - | - | - |
Input Capacitance (Ciss) (Max) @ Vds | 743 pF @ 100 V | 528 pF @ 100 V | 515 pF @ 10 V | 1783 pF @ 75 V |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | TO-220-3 Full Pack | TO-236-3, SC-59, SOT-23-3 | 8-SOIC (0.154", 3.90mm Width) |
Package protegéieren | Tube | Tube | Tape & Reel (TR) | Tape & Reel (TR) |
Entworf fir Source Voltage (Vdss) | 600 V | 600 V | 20 V | 150 V |
Eroflueden TSM60N600CH C5G PDF DataDhusts an Taiwan Semiconductor Corporation Dokumentatioun fir TSM60N600CH C5G - Taiwan Semiconductor Corporation.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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