TSM3446CX6 Tech Spezifikatioune
Taiwan Semiconductor Corporation - TSM3446CX6 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Taiwan Semiconductor Corporation - TSM3446CX6
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Taiwan Semiconductor | |
Vgs (th) (Max) @ Id | 1V @ 250µA | |
Vgs (Max) | ±12V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | SOT-26 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 33mOhm @ 5.3A, 4.5V | |
Power Dissipation (Max) | 2W (Ta) | |
Package / Case | SOT-23-6 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 10 V | |
Gate Charge (Qg) (Max) @ Vgs | 12.5 nC @ 4.5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
Entworf fir Source Voltage (Vdss) | 20 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5.3A (Tc) | |
Basis Produktnummer | TSM3446 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Taiwan Semiconductor Corporation TSM3446CX6.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | TSM3446CX6 | TSM3443CX6 | TSM3457CX6 RFG | TSM3443CX6 RFG |
Hiersteller | Taiwan Semiconductor Corporation | Taiwan Semiconductor Corporation | Taiwan Semiconductor Corporation | Taiwan Semiconductor Corporation |
Vgs (Max) | ±12V | ±12V | ±20V | ±12V |
Basis Produktnummer | TSM3446 | TSM3443 | TSM3457 | TSM3443 |
Package / Case | SOT-23-6 | SOT-23-6 | SOT-23-6 | SOT-23-6 |
Entworf fir Source Voltage (Vdss) | 20 V | 20 V | 30 V | 20 V |
Vgs (th) (Max) @ Id | 1V @ 250µA | 1.4V @ 250µA | 3V @ 250µA | 1.4V @ 250µA |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5.3A (Tc) | 4.7A (Ta) | 5A (Ta) | 4.7A (Ta) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 10 V | 640 pF @ 10 V | 551.57 pF @ 15 V | 640 pF @ 10 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Power Dissipation (Max) | 2W (Ta) | 2W (Ta) | 2W (Ta) | 2W (Ta) |
Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | 2.5V, 4.5V | 4.5V, 10V | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 33mOhm @ 5.3A, 4.5V | 60mOhm @ 4.7A, 4.5V | 60mOhm @ 5A, 10V | 60mOhm @ 4.7A, 4.5V |
Serie | - | - | - | - |
Gate Charge (Qg) (Max) @ Vgs | 12.5 nC @ 4.5 V | 9 nC @ 4.5 V | 27 nC @ 10 V | 9 nC @ 4.5 V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
FET Feature | - | - | - | - |
FET Typ | N-Channel | P-Channel | P-Channel | P-Channel |
Supplier Device Package | SOT-26 | SOT-26 | SOT-26 | SOT-26 |
Eroflueden TSM3446CX6 PDF DataDhusts an Taiwan Semiconductor Corporation Dokumentatioun fir TSM3446CX6 - Taiwan Semiconductor Corporation.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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