GBPC3506W Tech Spezifikatioune
Taiwan Semiconductor Corporation - GBPC3506W technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Taiwan Semiconductor Corporation - GBPC3506W
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Taiwan Semiconductor | |
| Voltage - Peak Reverse (Max) | 600 V | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.1 V @ 17.5 A | |
| Technologie | Standard | |
| Supplier Device Package | GBPC-W | |
| Serie | GBPC35 | |
| Package / Case | 4-Square, GBPC-W |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tray | |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Diode Type | Single Phase | |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 600 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 35 A | |
| Basis Produktnummer | GBPC3506 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Taiwan Semiconductor Corporation GBPC3506W.
| Produktiounsattriff |  |
 |
 |
 |
|---|---|---|---|---|
| Part Number | GBPC3506W | GBPC3506W | GBPC3506 | GBPC3506 |
| Hiersteller | Taiwan Semiconductor Corporation | Diodes Incorporated | SURGE | Taiwan Semiconductor Corporation |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 35 A | 35 A | 35 A | 35 A |
| Package protegéieren | Tray | Tray | Bag | Tray |
| Serie | GBPC35 | - | - | GBPC35 |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 600 V | 5 µA @ 600 V | 5 µA @ 600 V | 5 µA @ 600 V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Technologie | Standard | Standard | Standard | Standard |
| Basis Produktnummer | GBPC3506 | GBPC3506 | - | GBPC3506 |
| Supplier Device Package | GBPC-W | GBPC-W | GBPC | GBPC |
| Mounting Type | Through Hole | Through Hole | QC Terminal | Chassis Mount |
| Voltage - Viru (Vf) (Max) @ Wann | 1.1 V @ 17.5 A | 1.1 V @ 17.5 A | 1.1 V @ 17.5 A | 1.1 V @ 17.5 A |
| Diode Type | Single Phase | Single Phase | Single Phase | Single Phase |
| Package / Case | 4-Square, GBPC-W | 4-Square, GBPC-W | 4-Square, GBPC | 4-Square, GBPC |
| Voltage - Peak Reverse (Max) | 600 V | 600 V | 600 V | 600 V |
Eroflueden GBPC3506W PDF DataDhusts an Taiwan Semiconductor Corporation Dokumentatioun fir GBPC3506W - Taiwan Semiconductor Corporation.
GBPC3506WDiodes IncorporatedBRIDGE RECT 1PH 600V 35A GBPC-W
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GBPC3508Fairchild SemiconductorBRIDGE RECTIFIER DIODE, 1 PHASE,
GBPC3506WYangjie TechnologyGBPC-W 600V 35.0A Diodes Bridg
GBPC3506-E4/51Vishay General Semiconductor - Diodes DivisionBRIDGE RECT 1PHASE 600V 35A GBPC
GBPC3508SMC Diode SolutionsBRIDGE RECT 1PHASE 800V 35A GBPC
GBPC3506WGeneSiC SemiconductorBRIDGE RECT 1P 600V 35A GBPC-WGBPC3506WFairchild SemiconductorBRIDGE RECTIFIER DIODE, 1 PHASE,
GBPC3506WonsemiBRIDGE RECT 1P 600V 35A GBPC-WGBPC3506SMC Diode SolutionsBRIDGE RECT 1PHASE 600V 35A GBPC
GBPC3506WSMC Diode SolutionsBRIDGE RECT 1P 600V 35A GBPC-W
GBPC3506WSURGE35A -600V - GBPC-W - BRIDGEGBPC3506W-E4/51Vishay General Semiconductor - Diodes DivisionBRIDGE RECT 1P 600V 35A GBPC-W
GBPC3508Yangjie TechnologyDiodes - Bridge Rectifiers GBPC
GBPC3508onsemiBRIDGE RECT 1PHASE 800V 35A GBPCGBPC3506AMICIGBT Module| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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