BZX55C10 Tech Spezifikatioune
Taiwan Semiconductor Corporation - BZX55C10 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Taiwan Semiconductor Corporation - BZX55C10
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Taiwan Semiconductor | |
| Voltage - Zener (nom) (Vz) | 10 V | |
| Voltage - Viru (Vf) (Max) @ Wann | 1 V @ 100 mA | |
| Toleranz | ±5% | |
| Supplier Device Package | DO-35 | |
| Serie | - | |
| Power - Max | 500 mW |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | DO-204AH, DO-35, Axial | |
| Package protegéieren | Tape & Reel (TR) | |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Impedanz (Max) (Zzt) | 15 Ohms | |
| Aktuell - Reverse Leakage @ Vr | 100 nA @ 7.5 V | |
| Basis Produktnummer | BZX55 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Taiwan Semiconductor Corporation BZX55C10.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | BZX55C10 | BZX55B4V7-TAP | BZX55B6V8-TAP | BZX55B6V2-TAP |
| Hiersteller | Taiwan Semiconductor Corporation | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division |
| Aktuell - Reverse Leakage @ Vr | 100 nA @ 7.5 V | 500 nA @ 1 V | 100 nA @ 3 V | 100 nA @ 2 V |
| Voltage - Viru (Vf) (Max) @ Wann | 1 V @ 100 mA | 1.5 V @ 200 mA | 1.5 V @ 200 mA | 1.5 V @ 200 mA |
| Voltage - Zener (nom) (Vz) | 10 V | 4.7 V | 6.8 V | 6.2 V |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Package protegéieren | Tape & Reel (TR) | Cut Tape (CT) | Cut Tape (CT) | Cut Tape (CT) |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -65°C ~ 175°C | -65°C ~ 175°C | -65°C ~ 175°C |
| Supplier Device Package | DO-35 | DO-35 (DO-204AH) | DO-35 (DO-204AH) | DO-35 (DO-204AH) |
| Basis Produktnummer | BZX55 | BZX55B4V7 | BZX55B6V8 | BZX55B6V2 |
| Power - Max | 500 mW | 500 mW | 500 mW | 500 mW |
| Serie | - | Automotive, AEC-Q101, BZX55 | Automotive, AEC-Q101, BZX55 | Automotive, AEC-Q101, BZX55 |
| Toleranz | ±5% | ±2% | ±2% | ±2% |
| Impedanz (Max) (Zzt) | 15 Ohms | 80 Ohms | 8 Ohms | 10 Ohms |
| Package / Case | DO-204AH, DO-35, Axial | DO-204AH, DO-35, Axial | DO-204AH, DO-35, Axial | DO-204AH, DO-35, Axial |
Eroflueden BZX55C10 PDF DataDhusts an Taiwan Semiconductor Corporation Dokumentatioun fir BZX55C10 - Taiwan Semiconductor Corporation.
BZX55B4V7-TAPVishay General Semiconductor - Diodes DivisionDIODE ZENER 4.7V 500MW DO35BZX55B6V8-TAPVishay General Semiconductor - Diodes DivisionDIODE ZENER 6.8V 500MW DO35BZX55B6V2-TAPVishay General Semiconductor - Diodes DivisionDIODE ZENER 6.2V 500MW DO35
BZX55C11VSTMicroelectronicsBZX55B3V9-AYPANJIT
BZX55C11Taiwan Semiconductor CorporationDO-35, 500MW, 5%, SMALL SIGNAL Z
BZX55C12Fairchild SemiconductorDIODE ZENER 12V 500MW DO35
BZX55C10onsemiDIODE ZENER 10V 500MW DO35BZX55C10VSTMicroelectronicsBZX55C10Fairchild SemiconductorDIODE ZENER 10V 500MW DO35BZX55C10-TAPVishay General Semiconductor - Diodes DivisionDIODE ZENER 10V 500MW DO35BZX55C11Fairchild SemiconductorDIODE ZENER 11V 500MW DO35BZX55C 10VBZX55B5V1-AYPANJITBZX55C11-TAPVishay General Semiconductor - Diodes DivisionDIODE ZENER 11V 500MW DO35BZX55C11onsemiDIODE ZENER 11V 500MW DO35BZX55B56-TRVishay General Semiconductor - Diodes DivisionDIODE ZENER 56V 500MW DO35BZX55C 18V| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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