BZT52B16S Tech Spezifikatioune
Taiwan Semiconductor Corporation - BZT52B16S technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Taiwan Semiconductor Corporation - BZT52B16S
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Taiwan Semiconductor | |
| Voltage - Zener (nom) (Vz) | 16 V | |
| Voltage - Viru (Vf) (Max) @ Wann | 1 V @ 10 mA | |
| Toleranz | ±2% | |
| Supplier Device Package | SOD-323F | |
| Serie | - | |
| Power - Max | 200 mW |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | SC-90, SOD-323F | |
| Package protegéieren | Tape & Reel (TR) | |
| Operatioun Temperatur | -65°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Impedanz (Max) (Zzt) | 40 Ohms | |
| Aktuell - Reverse Leakage @ Vr | 45 nA @ 11.2 V | |
| Basis Produktnummer | BZT52B |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Taiwan Semiconductor Corporation BZT52B16S.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | BZT52B16S | BZT52B15LP-7B | BZT52B16-E3-08 | BZT52B18 |
| Hiersteller | Taiwan Semiconductor Corporation | Diodes Incorporated | Vishay General Semiconductor - Diodes Division | Good-Ark Semiconductor |
| Voltage - Viru (Vf) (Max) @ Wann | 1 V @ 10 mA | 900 mV @ 10 mA | - | 900 mV @ 10 mA |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Aktuell - Reverse Leakage @ Vr | 45 nA @ 11.2 V | 50 nA @ 10.5 V | 100 nA @ 12 V | 100 nA @ 12.6 V |
| Basis Produktnummer | BZT52B | BZT52 | BZT52B16 | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Toleranz | ±2% | ±2% | ±2% | ±2% |
| Supplier Device Package | SOD-323F | X1-DFN1006-2 | SOD-123 | SOD-123 |
| Impedanz (Max) (Zzt) | 40 Ohms | 15 Ohms | 40 Ohms | 45 Ohms |
| Serie | - | - | BZT52 | BZT52Bxxx |
| Voltage - Zener (nom) (Vz) | 16 V | 15 V | 16 V | 18 V |
| Operatioun Temperatur | -65°C ~ 150°C (TJ) | -65°C ~ 150°C | -65°C ~ 150°C | -65°C ~ 150°C (TJ) |
| Power - Max | 200 mW | 250 mW | 410 mW | 500 mW |
| Package / Case | SC-90, SOD-323F | 0402 (1006 Metric) | SOD-123 | SOD-123 |
Eroflueden BZT52B16S PDF DataDhusts an Taiwan Semiconductor Corporation Dokumentatioun fir BZT52B16S - Taiwan Semiconductor Corporation.
BZT52B15LP-7BDiodes IncorporatedDIODE ZENER 15V 250MW 2DFNBZT52B16-E3-08Vishay General Semiconductor - Diodes DivisionDIODE ZENER 16V 410MW SOD123BZT52B18Good-Ark SemiconductorDIODE, ZENER, 0.5W, 18V, SOD-123
BZT52B18STaiwan Semiconductor CorporationSOD-323F, 200MW, 2%, SMALL SIGNA
BZT52B16-V-GS08Electro-Films (EFI) / VishayBZT52B15-E3-08Vishay
BZT52B18BS-TPMicro Commercial CoInterfaceBZT52B15Taiwan Semiconductor CorporationSOD-123F, 500MW, 2%, SMALL SIGNA
BZT52B15S-7-FDiodes IncorporatedBZT52B15-G3-18Vishay General Semiconductor - Diodes DivisionDIODE ZENER 15V 410MW SOD123BZT52B18S 2WLCJBZT52B15-V-GS08Electro-Films (EFI) / VishayBZT52B18Diotec SemiconductorDIODE ZENER 18V 500MW SOD123FBZT52B18Taiwan Semiconductor CorporationSOD-123F, 500MW, 2%, SMALL SIGNA
BZT52B18SYangjie TechnologySOD-323 18V 0.3W Diodes ZenerBZT52B16SYangjie TechnologySOD-323 16V 0.3W Diodes ZenerBZT52B15-E3/08Electro-Films (EFI) / Vishay
BZT52B18-G RHGTaiwan Semiconductor CorporationDIODE ZENER 18V 410MW SOD123| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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