1N5401G Tech Spezifikatioune
Taiwan Semiconductor Corporation - 1N5401G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Taiwan Semiconductor Corporation - 1N5401G
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Taiwan Semiconductor | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.1 V @ 3 A | |
| Voltage - DC Reverse (Vr) (Max) | 100 V | |
| Technologie | Standard | |
| Supplier Device Package | DO-201AD | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Serie | - |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | DO-201AD, Axial | |
| Package protegéieren | Tape & Reel (TR) | |
| Operatiounstemperatur - Junction | -55°C ~ 150°C | |
| Mounting Type | Through Hole | |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 100 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 3A | |
| Capacitance @ Vr, F. | 25pF @ 4V, 1MHz |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Taiwan Semiconductor Corporation 1N5401G.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | 1N5401G | 1N5401 | 1N5401RLG | 1N5402 |
| Hiersteller | Taiwan Semiconductor Corporation | SMC Diode Solutions | onsemi | onsemi |
| Voltage - DC Reverse (Vr) (Max) | 100 V | 100 V | 100 V | 200 V |
| Operatiounstemperatur - Junction | -55°C ~ 150°C | -65°C ~ 175°C | -65°C ~ 150°C | -55°C ~ 150°C |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 100 V | 5 µA @ 100 V | 10 µA @ 100 V | 5 µA @ 200 V |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 3A | 3A | 3A | 3A |
| Voltage - Viru (Vf) (Max) @ Wann | 1.1 V @ 3 A | 1.2 V @ 3 A | 1 V @ 3 A | 1.2 V @ 3 A |
| Package / Case | DO-201AD, Axial | DO-201AD, Axial | DO-201AA, DO-27, Axial | DO-201AD, Axial |
| Supplier Device Package | DO-201AD | DO-201AD | Axial | DO-201AD |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Technologie | Standard | Standard | Standard | Standard |
| Speed | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) |
| Serie | - | - | - | - |
| Package protegéieren | Tape & Reel (TR) | Tape & Box (TB) | Tape & Reel (TR) | Tape & Reel (TR) |
| Capacitance @ Vr, F. | 25pF @ 4V, 1MHz | 30pF @ 0V, 1MHz | - | 30pF @ 4V, 1MHz |
Eroflueden 1N5401G PDF DataDhusts an Taiwan Semiconductor Corporation Dokumentatioun fir 1N5401G - Taiwan Semiconductor Corporation.
1N5401SMC Diode SolutionsDIODE GEN PURP 100V 3A DO201AD1N5401RLGonsemiDIODE GEN PURP 100V 3A AXIAL1N5402onsemiDIODE GEN PURP 200V 3A DO201AD1N5401onsemiDIODE GEN PURP 100V 3A DO201AD
1N5401Fairchild SemiconductorDIODE GEN PURP 100V 3A AXIAL
1N5401-DIPMIC
1N5401GSMC Diode SolutionsDIODE GEN PURP 100V 3A DO201AD1N5401NTE Electronics, IncDIODE GEN PURP 100V 3A DO201AD1N5401RLonsemiDIODE GEN PURP 100V 3A AXIAL1N5401TRAMI Semiconductor/onsemi1N5402Diotec SemiconductorDIODE GEN PURP 200V 3A DO2011N5402NTE Electronics, IncDIODE GEN PURP 200V 3A DO201AD1N5401Diotec SemiconductorDIODE STD DO-201 100V 3A
1N5401-E3/54Vishay General Semiconductor - Diodes DivisionDIODE GEN PURP 100V 3A DO201AD1N5402Fairchild SemiconductorDIODE GEN PURP 1V 3A DO2011N5401GonsemiDIODE GEN PURP 100V 3A AXIAL1N5401GGood-Ark SemiconductorRECTIFIER, GENERAL PURPOSE, GLAS
1N5401-TDiodes IncorporatedDIODE GEN PURP 100V 3A DO201AD| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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