1N4001G Tech Spezifikatioune
Taiwan Semiconductor Corporation - 1N4001G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Taiwan Semiconductor Corporation - 1N4001G
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Taiwan Semiconductor | |
| Voltage - Viru (Vf) (Max) @ Wann | 1 V @ 1 A | |
| Voltage - DC Reverse (Vr) (Max) | 50 V | |
| Technologie | Standard | |
| Supplier Device Package | DO-204AL (DO-41) | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Serie | - |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | DO-204AL, DO-41, Axial | |
| Package protegéieren | Tape & Reel (TR) | |
| Operatiounstemperatur - Junction | -55°C ~ 150°C | |
| Mounting Type | Through Hole | |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 50 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 1A | |
| Capacitance @ Vr, F. | 10pF @ 4V, 1MHz |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Taiwan Semiconductor Corporation 1N4001G.
| Produktiounsattriff |  |
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 |
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|---|---|---|---|---|
| Part Number | 1N4001G | 1N4002 | 1N4001G-T | 1N4001G |
| Hiersteller | Taiwan Semiconductor Corporation | onsemi | Diodes Incorporated | SMC Diode Solutions |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Serie | - | - | - | - |
| Operatiounstemperatur - Junction | -55°C ~ 150°C | -55°C ~ 175°C | -65°C ~ 175°C | -65°C ~ 175°C |
| Package / Case | DO-204AL, DO-41, Axial | DO-204AL, DO-41, Axial | DO-204AL, DO-41, Axial | DO-204AL, DO-41, Axial |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Technologie | Standard | Standard | Standard | Standard |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 1A | 1A | 1A | 1A |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 50 V | 10 µA @ 100 V | 5 µA @ 50 V | 5 µA @ 50 V |
| Voltage - Viru (Vf) (Max) @ Wann | 1 V @ 1 A | 1.1 V @ 1 A | 1 V @ 1 A | 1 V @ 1 A |
| Voltage - DC Reverse (Vr) (Max) | 50 V | 100 V | 50 V | 50 V |
| Speed | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) |
| Supplier Device Package | DO-204AL (DO-41) | DO-41 | DO-41 | DO-41 |
| Capacitance @ Vr, F. | 10pF @ 4V, 1MHz | 15pF @ 4V, 1MHz | 8pF @ 4V, 1MHz | 8pF @ 4V, 1MHz |
Eroflueden 1N4001G PDF DataDhusts an Taiwan Semiconductor Corporation Dokumentatioun fir 1N4001G - Taiwan Semiconductor Corporation.
1N4002onsemiDIODE GEN PURP 100V 1A DO41
1N4001WSTAEC Product (Toshiba Electronic Devices and Stora1N4001G M1SHIKUES1N4001G-TDiodes IncorporatedDIODE GEN PURP 50V 1A DO411N4001-TBGOODARK1N4001/DSR1A1N4001GSMC Diode SolutionsDIODE GEN PURP 50V 1A DO411N4001F M1PLINGSEMIC1N4001GonsemiDIODE GEN PURP 50V 1A AXIAL1N4001/M1STAR/DC
1N4001-TPMicro Commercial CoDIODE GEN PURP 50V 1A DO411N4001W(T4)CESENES1N4001FSHIKUES1N4001WRectron USADIODE GEN 1A 50V SOD-123F1N4001GP-E3/73Vishay General Semiconductor - Diodes DivisionDIODE GEN PURP 50V 1A DO204AL
1N4001IDLUMILEDS1N4001RLGonsemiDIODE GEN PURP 50V 1A AXIAL1N4001-TRectron USADIODE GEN PURP 1KV 1A DO41| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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