1N3012A Tech Spezifikatioune
Solid State Inc. - 1N3012A technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Solid State Inc. - 1N3012A
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Solid State Inc. | |
| Voltage - Zener (nom) (Vz) | 160 V | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.5 V @ 2 A | |
| Toleranz | ±10% | |
| Supplier Device Package | DO-4 | |
| Serie | - | |
| Power - Max | 10 W |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | DO-203AA, DO-4, Stud | |
| Package protegéieren | Box | |
| Operatioun Temperatur | -65°C ~ 175°C (TJ) | |
| Mounting Type | Stud Mount | |
| Impedanz (Max) (Zzt) | 200 Ohms | |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 115.2 V | |
| Basis Produktnummer | 1N3012 |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
| Erreecht Status | Vendor Undefined |
| ECCN | EAR99 |
| HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Solid State Inc. 1N3012A.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | 1N3012A | 1N3011RA | 1N3011RB | 1N3012B |
| Hiersteller | Solid State Inc. | Solid State Inc. | Microchip Technology | Microchip Technology |
| Mounting Type | Stud Mount | Stud Mount | Chassis, Stud Mount | Chassis, Stud Mount |
| Voltage - Zener (nom) (Vz) | 160 V | 150 V | 150 V | 160 V |
| Power - Max | 10 W | 10 W | 10 W | 10 W |
| Basis Produktnummer | 1N3012 | 1N3011 | 1N3011 | 1N3012 |
| Voltage - Viru (Vf) (Max) @ Wann | 1.5 V @ 2 A | 1.5 V @ 2 A | 1.5 V @ 2 A | 1.5 V @ 2 A |
| Supplier Device Package | DO-4 | DO-4 | DO-213AA | DO-213AA |
| Operatioun Temperatur | -65°C ~ 175°C (TJ) | -65°C ~ 175°C (TJ) | -65°C ~ 175°C | -65°C ~ 175°C |
| Package protegéieren | Box | Box | Bulk | Bulk |
| Package / Case | DO-203AA, DO-4, Stud | DO-203AA, DO-4, Stud | DO-203AA, DO-4, Stud | DO-203AA, DO-4, Stud |
| Serie | - | - | - | - |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 115.2 V | 5 µA @ 108 V | 10 µA @ 114 V | 10 µA @ 121.6 V |
| Impedanz (Max) (Zzt) | 200 Ohms | 175 Ohms | 175 Ohms | 200 Ohms |
| Toleranz | ±10% | ±10% | ±5% | ±5% |
Eroflueden 1N3012A PDF DataDhusts an Solid State Inc. Dokumentatioun fir 1N3012A - Solid State Inc..
1N3011RASolid State Inc.DO4 10 WATT ZENER DIODES1N3011RBMicrochip TechnologyDIODE ZENER 150V 10W DO213AA1N3012BMicrochip TechnologyDIODE ZENER 160V 10W DO213AA
1N3011ARMSC/MOTOROLAIGBT Module1N3012RASolid State Inc.DO4 10 WATT ZENER DIODES1N3011BSolid State Inc.DIODE ZENER 150V 10W DO41N3012RSolid State Inc.DO4 10 WATT ZENER DIODES1N3012ARMSC/MOTOROLAIGBT Module1N3012Solid State Inc.DO4 10 WATT ZENER DIODES1N3011BRMSC/MOTOROLAIGBT Module1N3011RBSolid State Inc.DO4 10 WATT ZENER DIODES1N3012BRMSC/MOTOROLAIGBT Module1N3011BNaina Semiconductor Ltd.ZENER DIODE 150V 10W DO-41N3012BSolid State Inc.DO4 10 WATT ZENER DIODES1N3012AMicrochip TechnologyDIODE ZENER 160V 10W DO213AA1N3012RBMicrochip TechnologyDIODE ZENER 160V 10W DO213AA1N3011BMicrochip TechnologyDIODE ZENER 150V 10W DO213AA1N3012RBSolid State Inc.DO4 10 WATT ZENER DIODES| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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