1N1666R Tech Spezifikatioune
Solid State Inc. - 1N1666R technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Solid State Inc. - 1N1666R
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Solid State Inc. | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.3 V @ 300 A | |
| Voltage - DC Reverse (Vr) (Max) | 500 V | |
| Technologie | Standard, Reverse Polarity | |
| Supplier Device Package | DO-9 | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Serie | - |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | DO-205AB, DO-9, Stud | |
| Package protegéieren | Box | |
| Operatiounstemperatur - Junction | -65°C ~ 190°C | |
| Mounting Type | Stud Mount | |
| Aktuell - Reverse Leakage @ Vr | 75 µA @ 500 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 275A | |
| Capacitance @ Vr, F. | - |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Solid State Inc. 1N1666R.
| Produktiounsattriff |  |
|
 |
|
|---|---|---|---|---|
| Part Number | 1N1666R | 1N1670 | 1N1666 | 1N1670 |
| Hiersteller | Solid State Inc. | Solid State Inc. | Microchip Technology | Microchip Technology |
| Voltage - DC Reverse (Vr) (Max) | 500 V | 50 V | 500 V | 50 V |
| Serie | - | - | - | - |
| Mounting Type | Stud Mount | Stud Mount | Stud Mount | Stud Mount |
| Package protegéieren | Box | Box | Bulk | Bulk |
| Package / Case | DO-205AB, DO-9, Stud | DO-205AB, DO-9, Stud | DO-205AB, DO-9, Stud | DO-205AB, DO-9, Stud |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 275A | 275A | 275A | 275A |
| Operatiounstemperatur - Junction | -65°C ~ 190°C | -65°C ~ 190°C | -65°C ~ 190°C | -65°C ~ 190°C |
| Speed | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) |
| Voltage - Viru (Vf) (Max) @ Wann | 1.3 V @ 300 A | 1.3 V @ 300 A | 1.3 V @ 300 A | 1.3 V @ 300 A |
| Technologie | Standard, Reverse Polarity | Standard | Standard | Standard |
| Supplier Device Package | DO-9 | DO-9 | DO-205AB (DO-9) | DO-205AB (DO-9) |
| Aktuell - Reverse Leakage @ Vr | 75 µA @ 500 V | 75 µA @ 50 V | 75 µA @ 500 V | 75 µA @ 50 V |
| Capacitance @ Vr, F. | - | - | - | - |
Eroflueden 1N1666R PDF DataDhusts an Solid State Inc. Dokumentatioun fir 1N1666R - Solid State Inc..
1N1670Solid State Inc.DIODE GEN PURP 50V 275A DO9
1N1668MSCIGBT Module1N1668BMSCIGBT Module1N1666Microchip TechnologyDIODE GP 500V 275A DO205AB DO91N1670Microchip TechnologyDIODE GP 50V 275A DO205AB DO91N1667BMSCIGBT Module1N1670BMSCIGBT Module1N1666Solid State Inc.DIODE GEN PURP 500V 275A DO91N1665Microchip TechnologyDIODE GP 400V 275A DO205AB DO91N1666BMSCIGBT Module1N1667MSCIGBT Module1N1665RSolid State Inc.DIODE GEN PURP REV 400V 275A DO91N1669MSCIGBT Module1N1664BMSCIGBT Module1N1664RSolid State Inc.DIODE GEN PURP REV 300V 275A DO91N1665BMSCIGBT Module1N1669BMSCIGBT Module1N1665Solid State Inc.DIODE GEN PURP 400V 275A DO9| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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