STW20NB50 Tech Spezifikatioune
STMicroelectronics - STW20NB50 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STW20NB50
Produktiounsattriff | Attributer Wäert | |
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Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 5V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-247-3 | |
Serie | PowerMESH™ | |
Rds On (Max) @ Id, Vgs | 250mOhm @ 10A, 10V | |
Power Dissipation (Max) | 250W (Tc) | |
Package / Case | TO-247-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 4700 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 500 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 20A (Tc) | |
Basis Produktnummer | STW20N |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STW20NB50.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STW20NB50 | STW20NK50Z | STW19NM65N | STW20N65M5 |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
FET Feature | - | - | - | - |
Input Capacitance (Ciss) (Max) @ Vds | 4700 pF @ 25 V | 2600 pF @ 25 V | 1900 pF @ 50 V | 1345 pF @ 100 V |
Entworf fir Source Voltage (Vdss) | 500 V | 500 V | 650 V | 650 V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Basis Produktnummer | STW20N | STW20 | STW19N | STW20N |
Serie | PowerMESH™ | SuperMESH™ | MDmesh™ II | MDmesh™ V |
Vgs (th) (Max) @ Id | 5V @ 250µA | 4.5V @ 100µA | 4V @ 250µA | 5V @ 250µA |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 20A (Tc) | 17A (Tc) | 15.5A (Tc) | 18A (Tc) |
Power Dissipation (Max) | 250W (Tc) | 190W (Tc) | 150W (Tc) | 130W (Tc) |
Package protegéieren | Tube | Tube | Tube | Tube |
Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | -55°C ~ 150°C (TJ) |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
Supplier Device Package | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V | 119 nC @ 10 V | 55 nC @ 10 V | 45 nC @ 10 V |
Rds On (Max) @ Id, Vgs | 250mOhm @ 10A, 10V | 270mOhm @ 8.5A, 10V | 270mOhm @ 7.75A, 10V | 190mOhm @ 9A, 10V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Vgs (Max) | ±30V | ±30V | ±25V | ±25V |
Eroflueden STW20NB50 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STW20NB50 - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Brasilien | 7 | |
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DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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