STU10NM60N Tech Spezifikatioune
STMicroelectronics - STU10NM60N technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STU10NM60N
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±25V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-251 (IPAK) | |
Serie | MDmesh™ II | |
Rds On (Max) @ Id, Vgs | 550mOhm @ 4A, 10V | |
Power Dissipation (Max) | 70W (Tc) | |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 540 pF @ 50 V | |
Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 600 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10A (Tc) | |
Basis Produktnummer | STU10 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STU10NM60N.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STU10NM60N | STU11N65M2 | STU12N60M2 | STU10NM65N |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Rds On (Max) @ Id, Vgs | 550mOhm @ 4A, 10V | 670mOhm @ 3.5A, 10V | 450mOhm @ 4.5A, 10V | 480mOhm @ 4.5A, 10V |
FET Feature | - | - | - | - |
Vgs (Max) | ±25V | ±25V | ±25V | ±25V |
Input Capacitance (Ciss) (Max) @ Vds | 540 pF @ 50 V | 410 pF @ 100 V | 538 pF @ 100 V | 850 pF @ 50 V |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) |
Entworf fir Source Voltage (Vdss) | 600 V | 650 V | 600 V | 650 V |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
Power Dissipation (Max) | 70W (Tc) | 85W (Tc) | 85W (Tc) | 90W (Tc) |
Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V | 12.5 nC @ 10 V | 16 nC @ 10 V | 25 nC @ 10 V |
Serie | MDmesh™ II | MDmesh™ II Plus | MDmesh™ M2 | MDmesh™ II |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10A (Tc) | 7A (Tc) | 9A (Tc) | 9A (Tc) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Package protegéieren | Tube | Tube | Tube | Tube |
Supplier Device Package | TO-251 (IPAK) | TO-251 (IPAK) | TO-251 (IPAK) | I-PAK |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Basis Produktnummer | STU10 | STU11 | STU12 | STU10N |
Eroflueden STU10NM60N PDF DataDhusts an STMicroelectronics Dokumentatioun fir STU10NM60N - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.