STP9NK60ZD Tech Spezifikatioune
STMicroelectronics - STP9NK60ZD technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STP9NK60ZD
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 4.5V @ 100µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220 | |
Serie | SuperFREDmesh™ | |
Rds On (Max) @ Id, Vgs | 950mOhm @ 3.5A, 10V | |
Power Dissipation (Max) | 125W (Tc) | |
Package / Case | TO-220-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 1110 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 53 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 600 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 7A (Tc) | |
Basis Produktnummer | STP9N |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STP9NK60ZD.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STP9NK60ZD | STP9NK65Z | STP9NK60ZFP | STP9NK65ZFP |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
FET Feature | - | - | - | - |
Rds On (Max) @ Id, Vgs | 950mOhm @ 3.5A, 10V | 1.2Ohm @ 3.2A, 10V | 950mOhm @ 3.5A, 10V | 1.2Ohm @ 3.2A, 10V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Entworf fir Source Voltage (Vdss) | 600 V | 650 V | 600 V | 650 V |
Supplier Device Package | TO-220 | TO-220 | TO-220FP | TO-220FP |
Package protegéieren | Tube | Tube | Tube | Tube |
Vgs (Max) | ±30V | ±30V | ±30V | ±30V |
Basis Produktnummer | STP9N | STP9NK65 | STP9NK60 | STP9NK65 |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 7A (Tc) | 6.4A (Tc) | 7A (Tc) | 6.4A (Tc) |
Serie | SuperFREDmesh™ | SuperMESH™ | SuperMESH™ | SuperMESH™ |
Gate Charge (Qg) (Max) @ Vgs | 53 nC @ 10 V | 41 nC @ 10 V | 53 nC @ 10 V | 41 nC @ 10 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 Full Pack | TO-220-3 Full Pack |
Vgs (th) (Max) @ Id | 4.5V @ 100µA | 4.5V @ 100µA | 4.5V @ 100µA | 4.5V @ 100µA |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1110 pF @ 25 V | 1145 pF @ 25 V | 1110 pF @ 25 V | 1145 pF @ 25 V |
Power Dissipation (Max) | 125W (Tc) | 125W (Tc) | 30W (Tc) | 30W (Tc) |
Eroflueden STP9NK60ZD PDF DataDhusts an STMicroelectronics Dokumentatioun fir STP9NK60ZD - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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