STP80NE06-10 Tech Spezifikatioune
STMicroelectronics - STP80NE06-10 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STP80NE06-10
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 10mOhm @ 40A, 10V | |
Power Dissipation (Max) | 150W (Tc) | |
Package / Case | TO-220-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 10000 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 60 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 80A (Tc) | |
Basis Produktnummer | STP80N |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STP80NE06-10.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STP80NE06-10 | STP80NF03L | STP80NE03L-06 | STP80NF03L-04 |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Supplier Device Package | TO-220 | TO-220 | TO-220 | TO-220 |
Input Capacitance (Ciss) (Max) @ Vds | 10000 pF @ 25 V | 5500 pF @ 25 V | 8700 pF @ 25 V | 5500 pF @ 25 V |
Vgs (th) (Max) @ Id | 4V @ 250µA | 2.5V @ 250µA | 2.5V @ 250µA | 2.5V @ 250µA |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V | 110 nC @ 4.5 V | 130 nC @ 5 V | 110 nC @ 4.5 V |
FET Feature | - | - | - | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 80A (Tc) | 80A (Tc) | 80A (Tc) | 80A (Tc) |
Entworf fir Source Voltage (Vdss) | 60 V | 30 V | 30 V | 30 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 4.5V, 10V | 5V, 10V | 4.5V, 10V |
Operatioun Temperatur | 175°C (TJ) | 175°C (TJ) | 175°C (TJ) | 175°C (TJ) |
Basis Produktnummer | STP80N | STP80N | STP80N | STP80 |
Power Dissipation (Max) | 150W (Tc) | 300W (Tc) | 150W (Tc) | 300W (Tc) |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
Package protegéieren | Tube | Tube | Tube | Tube |
Serie | - | STripFET™ II | - | STripFET™ II |
Rds On (Max) @ Id, Vgs | 10mOhm @ 40A, 10V | 4.5mOhm @ 40A, 10V | 6mOhm @ 40A, 10V | 4.5mOhm @ 40A, 10V |
Vgs (Max) | ±20V | ±20V | ±22V | ±20V |
Eroflueden STP80NE06-10 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STP80NE06-10 - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.