STI45N10F7 Tech Spezifikatioune
STMicroelectronics - STI45N10F7 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STI45N10F7
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 4.5V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | I2PAK (TO-262) | |
Serie | DeepGATE™, STripFET™ VII | |
Rds On (Max) @ Id, Vgs | 18mOhm @ 22.5A, 10V | |
Power Dissipation (Max) | 60W (Tc) | |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 1640 pF @ 50 V | |
Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 45A (Tc) | |
Basis Produktnummer | STI45N |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STI45N10F7.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STI45N10F7 | STI4N62K3 | STI47N60DM6AG | STI4600BCV |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Vgs (th) (Max) @ Id | 4.5V @ 250µA | 4.5V @ 50µA | 4.75V @ 250µA | - |
Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V | 22 nC @ 10 V | 55 nC @ 10 V | - |
Rds On (Max) @ Id, Vgs | 18mOhm @ 22.5A, 10V | 2Ohm @ 1.9A, 10V | 80mOhm @ 18A, 10V | - |
FET Feature | - | - | - | - |
Input Capacitance (Ciss) (Max) @ Vds | 1640 pF @ 50 V | 550 pF @ 50 V | 2350 pF @ 100 V | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 45A (Tc) | 3.8A (Tc) | 36A (Tc) | - |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - |
Package protegéieren | Tube | Tube | Tube | - |
FET Typ | N-Channel | N-Channel | N-Channel | - |
Serie | DeepGATE™, STripFET™ VII | SuperMESH3™ | Automotive, AEC-Q101, MDmesh™ DM6 | - |
Basis Produktnummer | STI45N | STI4N62 | STI47 | - |
Power Dissipation (Max) | 60W (Tc) | 70W (Tc) | 250W (Tc) | - |
Entworf fir Source Voltage (Vdss) | 100 V | 620 V | 600 V | - |
Vgs (Max) | ±20V | ±30V | ±25V | - |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | - |
Supplier Device Package | I2PAK (TO-262) | I2PAK | I2PAK (TO-262) | - |
Mounting Type | Through Hole | Through Hole | Through Hole | - |
Eroflueden STI45N10F7 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STI45N10F7 - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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