STI24N60M2 Tech Spezifikatioune
STMicroelectronics - STI24N60M2 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STI24N60M2
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±25V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | I2PAK (TO-262) | |
Serie | MDmesh™ II Plus | |
Rds On (Max) @ Id, Vgs | 190mOhm @ 9A, 10V | |
Power Dissipation (Max) | 150W (Tc) | |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 1060 pF @ 100 V | |
Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 600 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 18A (Tc) | |
Basis Produktnummer | STI24 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STI24N60M2.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STI24N60M2 | STI270N4F3 | STI18N65M2 | STI32N65M5 |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Entworf fir Source Voltage (Vdss) | 600 V | 40 V | 650 V | 650 V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | 150°C (TJ) | 150°C (TJ) |
Basis Produktnummer | STI24 | STI270 | STI18 | STI32N |
Vgs (Max) | ±25V | ±20V | ±25V | ±25V |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 5V @ 250µA |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Input Capacitance (Ciss) (Max) @ Vds | 1060 pF @ 100 V | 7400 pF @ 25 V | 770 pF @ 100 V | 3320 pF @ 100 V |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Rds On (Max) @ Id, Vgs | 190mOhm @ 9A, 10V | 2.6mOhm @ 80A, 10V | 330mOhm @ 6A, 10V | 119mOhm @ 12A, 10V |
Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V | 150 nC @ 10 V | 20 nC @ 10 V | 72 nC @ 10 V |
Serie | MDmesh™ II Plus | Automotive, AEC-Q101, STripFET™ III | MDmesh™ M2 | MDmesh™ V |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
FET Feature | - | - | - | - |
Supplier Device Package | I2PAK (TO-262) | I2PAK | I2PAK | I2PAK |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 18A (Tc) | 160A (Tc) | 12A (Tc) | 24A (Tc) |
Power Dissipation (Max) | 150W (Tc) | 330W (Tc) | 110W (Tc) | 150W (Tc) |
Package protegéieren | Tube | Tube | Tube | Tube |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA |
Eroflueden STI24N60M2 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STI24N60M2 - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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