STH275N8F7-6AG Tech Spezifikatioune
STMicroelectronics - STH275N8F7-6AG technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STH275N8F7-6AG
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 4.5V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | H2PAK-6 | |
Serie | Automotive, AEC-Q101, STripFET™ F7 | |
Rds On (Max) @ Id, Vgs | 2.1mOhm @ 90A, 10V | |
Power Dissipation (Max) | 315W (Tc) | |
Package / Case | TO-263-7, D²Pak (6 Leads + Tab) | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 13600 pF @ 50 V | |
Gate Charge (Qg) (Max) @ Vgs | 193 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 80 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 180A (Tc) | |
Basis Produktnummer | STH275 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STH275N8F7-6AG.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STH275N8F7-6AG | STH300NH02L-6 | STH265N6F6-2AG | STH260N6F6-2 |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Basis Produktnummer | STH275 | STH300 | STH265 | STH260 |
Supplier Device Package | H2PAK-6 | H²PAK | H2Pak-2 | H2Pak-2 |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 13600 pF @ 50 V | 7050 pF @ 15 V | 11800 pF @ 25 V | 11800 pF @ 25 V |
FET Feature | - | - | - | - |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Serie | Automotive, AEC-Q101, STripFET™ F7 | Automotive, AEC-Q101, STripFET™ III | Automotive, AEC-Q101, STripFET™ F6 | DeepGATE™, STripFET™ VI |
Rds On (Max) @ Id, Vgs | 2.1mOhm @ 90A, 10V | 1.2mOhm @ 80A, 10V | 2.1mOhm @ 60A, 10V | 2.4mOhm @ 60A, 10V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 180A (Tc) | 180A (Tc) | 180A (Tc) | 180A (Tc) |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Gate Charge (Qg) (Max) @ Vgs | 193 nC @ 10 V | 109 nC @ 10 V | 183 nC @ 10 V | 183 nC @ 10 V |
Package / Case | TO-263-7, D²Pak (6 Leads + Tab) | TO-263-7, D²Pak (6 Leads + Tab) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Vgs (th) (Max) @ Id | 4.5V @ 250µA | 1V @ 250µA | 4V @ 250µA | 4V @ 250µA |
Entworf fir Source Voltage (Vdss) | 80 V | 24 V | 60 V | 60 V |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 5V, 10V | 10V | 10V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Power Dissipation (Max) | 315W (Tc) | 300W (Tc) | 300W (Tc) | 300W (Tc) |
Eroflueden STH275N8F7-6AG PDF DataDhusts an STMicroelectronics Dokumentatioun fir STH275N8F7-6AG - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.