STF8N60DM2 Tech Spezifikatioune
STMicroelectronics - STF8N60DM2 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STF8N60DM2
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | STMicroelectronics | |
| Vgs (th) (Max) @ Id | 5V @ 250µA | |
| Vgs (Max) | ±25V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220FPAB | |
| Serie | MDmesh™ DM2 | |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 4A, 10V | |
| Power Dissipation (Max) | 25W (Tc) | |
| Package / Case | TO-220-3 Full Pack | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 449 pF @ 100 V | |
| Gate Charge (Qg) (Max) @ Vgs | 13.5 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 600 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8A (Tc) | |
| Basis Produktnummer | STF8 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STF8N60DM2.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | STF8N60DM2 | STF8NK100Z | STF8N80K5 | STF8NK85Z |
| Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Serie | MDmesh™ DM2 | SuperMESH™ | SuperMESH5™ | SuperMESH™ |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Vgs (Max) | ±25V | ±30V | ±30V | ±30V |
| Vgs (th) (Max) @ Id | 5V @ 250µA | 4.5V @ 100µA | 5V @ 100µA | 4.5V @ 100µA |
| Basis Produktnummer | STF8 | STF8 | STF8 | STF8N |
| Gate Charge (Qg) (Max) @ Vgs | 13.5 nC @ 10 V | 102 nC @ 10 V | 16.5 nC @ 10 V | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 449 pF @ 100 V | 2180 pF @ 25 V | 450 pF @ 100 V | 1870 pF @ 25 V |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Package protegéieren | Tube | Tube | Tube | Tube |
| Power Dissipation (Max) | 25W (Tc) | 40W (Tc) | 25W (Tc) | 35W (Tc) |
| Entworf fir Source Voltage (Vdss) | 600 V | 1000 V | 800 V | 850 V |
| Supplier Device Package | TO-220FPAB | TO-220FP | TO-220FP | TO-220FP |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8A (Tc) | 6.5A (Tc) | 6A (Tc) | 6.7A (Tc) |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 4A, 10V | 1.85Ohm @ 3.15A, 10V | 950mOhm @ 3A, 10V | 1.4Ohm @ 3.35A, 10V |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack |
| FET Feature | - | - | - | - |
Eroflueden STF8N60DM2 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STF8N60DM2 - STMicroelectronics.
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STF826STMicroelectronicsTRANS PNP 30V 3A SOT89-3| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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