STF7N52DK3 Tech Spezifikatioune
STMicroelectronics - STF7N52DK3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STF7N52DK3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 4.5V @ 50µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220FP | |
Serie | SuperFREDmesh3™ | |
Rds On (Max) @ Id, Vgs | 1.15Ohm @ 3A, 10V | |
Power Dissipation (Max) | 25W (Tc) | |
Package / Case | TO-220-3 Full Pack | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 50 V | |
Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 525 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6A (Tc) | |
Basis Produktnummer | STF7N |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STF7N52DK3.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STF7N52DK3 | STF7N52K3 | STF7N65M2 | STF7N60M2 |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Entworf fir Source Voltage (Vdss) | 525 V | 525 V | 650 V | 600 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6A (Tc) | 6A (Tc) | 5A (Tc) | 5A (Tc) |
Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 50 V | 870 pF @ 100 V | 270 pF @ 100 V | 271 pF @ 100 V |
Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V | 33 nC @ 10 V | 9 nC @ 10 V | 8.8 nC @ 10 V |
Supplier Device Package | TO-220FP | TO-220FP | TO-220FP | TO-220FP |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
FET Feature | - | - | - | - |
Package protegéieren | Tube | Tube | Tube | Tube |
Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack |
Rds On (Max) @ Id, Vgs | 1.15Ohm @ 3A, 10V | 850mOhm @ 3A, 10V | 1.15Ohm @ 2.5A, 10V | 950mOhm @ 2.5A, 10V |
Power Dissipation (Max) | 25W (Tc) | 25W (Tc) | 20W (Tc) | 20W (Tc) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Serie | SuperFREDmesh3™ | SuperMESH3™ | MDmesh™ | MDmesh™ II Plus |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Vgs (Max) | ±30V | ±30V | ±25V | ±25V |
Vgs (th) (Max) @ Id | 4.5V @ 50µA | 4.5V @ 50µA | 4V @ 250µA | 4V @ 250µA |
Basis Produktnummer | STF7N | STF7N | STF7 | STF7 |
Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Eroflueden STF7N52DK3 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STF7N52DK3 - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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