STD6NM60N-1 Tech Spezifikatioune
STMicroelectronics - STD6NM60N-1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STD6NM60N-1
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | STMicroelectronics | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±25V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-251 (IPAK) | |
| Serie | MDmesh™ II | |
| Rds On (Max) @ Id, Vgs | 920mOhm @ 2.3A, 10V | |
| Power Dissipation (Max) | 45W (Tc) | |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 420 pF @ 50 V | |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 600 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.6A (Tc) | |
| Basis Produktnummer | STD6N |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STD6NM60N-1.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | STD6NM60N-1 | STD6NM60N | STD6NF10T4 | STD6NK50ZT4 |
| Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Vgs (Max) | ±25V | ±25V | ±20V | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 420 pF @ 50 V | 420 pF @ 50 V | 280 pF @ 25 V | 690 pF @ 25 V |
| Rds On (Max) @ Id, Vgs | 920mOhm @ 2.3A, 10V | 920mOhm @ 2.3A, 10V | 250mOhm @ 3A, 10V | 1.2Ohm @ 2.8A, 10V |
| Supplier Device Package | TO-251 (IPAK) | DPAK | DPAK | DPAK |
| Basis Produktnummer | STD6N | STD6N | STD6NF10 | STD6NK50 |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V | 13 nC @ 10 V | 14 nC @ 10 V | 24.6 nC @ 10 V |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -65°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
| Serie | MDmesh™ II | MDmesh™ II | STripFET™ | SuperMESH™ |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.6A (Tc) | 4.6A (Tc) | 6A (Tc) | 5.6A (Tc) |
| Entworf fir Source Voltage (Vdss) | 600 V | 600 V | 100 V | 500 V |
| Mounting Type | Through Hole | Surface Mount | Surface Mount | Surface Mount |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4.5V @ 50µA |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 45W (Tc) | 45W (Tc) | 30W (Tc) | 90W (Tc) |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Package protegéieren | Tube | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Eroflueden STD6NM60N-1 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STD6NM60N-1 - STMicroelectronics.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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