STD11NM60ND Tech Spezifikatioune
STMicroelectronics - STD11NM60ND technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STD11NM60ND
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 5V @ 250µA | |
Vgs (Max) | ±25V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | DPAK | |
Serie | FDmesh™ II | |
Rds On (Max) @ Id, Vgs | 450mOhm @ 5A, 10V | |
Power Dissipation (Max) | 90W (Tc) | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 850 pF @ 50 V | |
Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 600 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10A (Tc) | |
Basis Produktnummer | STD11 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STD11NM60ND.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STD11NM60ND | STD11N65M5 | STD11NM50N | STD120N4LF6 |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
FET Feature | - | - | - | - |
Rds On (Max) @ Id, Vgs | 450mOhm @ 5A, 10V | 480mOhm @ 4.5A, 10V | 470mOhm @ 4.5A, 10V | 4mOhm @ 40A, 10V |
Vgs (Max) | ±25V | ±25V | ±25V | ±20V |
Basis Produktnummer | STD11 | STD11 | STD11 | STD120 |
Entworf fir Source Voltage (Vdss) | 600 V | 650 V | 500 V | 40 V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Supplier Device Package | DPAK | DPAK | DPAK | DPAK |
Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V | 17 nC @ 10 V | 19 nC @ 10 V | 80 nC @ 10 V |
Power Dissipation (Max) | 90W (Tc) | 85W (Tc) | 70W (Tc) | 110W (Tc) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 5V, 10V |
Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | -55°C ~ 175°C (TJ) |
Vgs (th) (Max) @ Id | 5V @ 250µA | 5V @ 250µA | 4V @ 250µA | 3V @ 250µA |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Serie | FDmesh™ II | MDmesh™ V | MDmesh™ II | Automotive, AEC-Q101, DeepGATE™, STripFET™ VI |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10A (Tc) | 9A (Tc) | 8.5A (Tc) | 80A (Tc) |
Input Capacitance (Ciss) (Max) @ Vds | 850 pF @ 50 V | 620 pF @ 100 V | 547 pF @ 50 V | 4300 pF @ 25 V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Eroflueden STD11NM60ND PDF DataDhusts an STMicroelectronics Dokumentatioun fir STD11NM60ND - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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