STB20NM60-1 Tech Spezifikatioune
STMicroelectronics - STB20NM60-1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STB20NM60-1
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | STMicroelectronics | |
| Vgs (th) (Max) @ Id | 5V @ 250µA | |
| Vgs (Max) | ±30V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | I2PAK | |
| Serie | MDmesh™ | |
| Rds On (Max) @ Id, Vgs | 290mOhm @ 10A, 10V | |
| Power Dissipation (Max) | 192W (Tc) | |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 600 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 20A (Tc) | |
| Basis Produktnummer | STB20N |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
| Erreecht Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STB20NM60-1.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | STB20NM60-1 | STB20NK50ZT4 | STB21N90K5 | STB21NK50Z |
| Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Vgs (Max) | ±30V | ±30V | ±30V | ±30V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Power Dissipation (Max) | 192W (Tc) | 190W (Tc) | 250W (Tc) | 190W (Tc) |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Basis Produktnummer | STB20N | STB20N | STB21 | STB21N |
| FET Feature | - | - | - | - |
| Serie | MDmesh™ | SuperMESH™ | SuperMESH5™ | Automotive, AEC-Q101, SuperMESH™ |
| Vgs (th) (Max) @ Id | 5V @ 250µA | 4.5V @ 100µA | 5V @ 100µA | 4.5V @ 100µA |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 20A (Tc) | 17A (Tc) | 18.5A (Tc) | 17A (Tc) |
| Supplier Device Package | I2PAK | D2PAK | D2PAK | D2PAK |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V | 119 nC @ 10 V | 43 nC @ 10 V | 119 nC @ 10 V |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Mounting Type | Through Hole | Surface Mount | Surface Mount | Surface Mount |
| Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) |
| Package protegéieren | Tube | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 290mOhm @ 10A, 10V | 270mOhm @ 8.5A, 10V | 299mOhm @ 9A, 10V | 270mOhm @ 8.5A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 25 V | 2600 pF @ 25 V | 1645 pF @ 100 V | 2600 pF @ 25 V |
| Entworf fir Source Voltage (Vdss) | 600 V | 500 V | 900 V | 500 V |
Eroflueden STB20NM60-1 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STB20NM60-1 - STMicroelectronics.
STB20NM50T4 MOSSTMicroelectronicsSTB21NK50Z MOSSTMicroelectronicsSTB20NK50ZT4STMicroelectronicsMOSFET N-CH 500V 17A D2PAKSTB21N90K5STMicroelectronicsMOSFET N-CH 900V 18.5A D2PAKSTB21NK50ZSTMicroelectronicsMOSFET N-CH 500V 17A D2PAKSTB21NK50ZT4STMicroelectronicsSTB20NM50NSTMicroelectronicsSTB21N65M5 21N65M5STMicroelectronicsSTB20NM60DSTMicroelectronicsMOSFET N-CH 600V 20A D2PAKSTB20NK50ZSTMicroelectronicsSTB20NF06LT4STMicroelectronics
STB21N50C3Cypress Semiconductor (Infineon Technologies)STB20NM60T4STMicroelectronicsMOSFET N-CH 600V 20A D2PAKSTB20NM50T4STMicroelectronicsMOSFET N-CH 550V 20A D2PAKSTB20NM50FDSTMicroelectronicsSTB20NM50STMicroelectronicsSTB20NM60STMicroelectronicsSTB21N65M5STMicroelectronicsMOSFET N-CH 650V 17A D2PAK| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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