STB18NM60ND Tech Spezifikatioune
STMicroelectronics - STB18NM60ND technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STB18NM60ND
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 5V @ 250µA | |
Vgs (Max) | ±25V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | D²PAK (TO-263) | |
Serie | FDmesh™ II | |
Rds On (Max) @ Id, Vgs | 290mOhm @ 6.5A, 10V | |
Power Dissipation (Max) | 110W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1030 pF @ 50 V | |
Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 600 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 13A (Tc) | |
Basis Produktnummer | STB18 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STB18NM60ND.
Produktiounsattriff | ||||
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Part Number | STB18NM60ND | STB18N55M5 | STB18NM80 | STB200N6F3 |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Vgs (th) (Max) @ Id | 5V @ 250µA | 5V @ 250µA | 5V @ 250µA | 4V @ 250µA |
Entworf fir Source Voltage (Vdss) | 600 V | 550 V | 800 V | 60 V |
FET Feature | - | - | - | - |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Vgs (Max) | ±25V | ±25V | ±25V | ±20V |
Power Dissipation (Max) | 110W (Tc) | 110W (Tc) | 190W (Tc) | 330W (Tc) |
Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V | 31 nC @ 10 V | 70 nC @ 10 V | 100 nC @ 10 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Basis Produktnummer | STB18 | STB18N | STB18 | STB200N |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Serie | FDmesh™ II | MDmesh™ V | MDmesh™ | STripFET™ |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Input Capacitance (Ciss) (Max) @ Vds | 1030 pF @ 50 V | 1260 pF @ 100 V | 2070 pF @ 50 V | 6800 pF @ 25 V |
Rds On (Max) @ Id, Vgs | 290mOhm @ 6.5A, 10V | 192mOhm @ 8A, 10V | 295mOhm @ 8.5A, 10V | 3.6mOhm @ 60A, 10V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 13A (Tc) | 16A (Tc) | 17A (Tc) | 120A (Tc) |
Supplier Device Package | D²PAK (TO-263) | D²PAK (TO-263) | D²PAK (TO-263) | D2PAK |
Eroflueden STB18NM60ND PDF DataDhusts an STMicroelectronics Dokumentatioun fir STB18NM60ND - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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