SCT1000N170 Tech Spezifikatioune
STMicroelectronics - SCT1000N170 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - SCT1000N170
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | STMicroelectronics | |
| Vgs (th) (Max) @ Id | 3.5V @ 1mA | |
| Vgs (Max) | +22V, -10V | |
| Technologie | SiCFET (Silicon Carbide) | |
| Supplier Device Package | HiP247™ | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 1.3Ohm @ 3A, 20V | |
| Power Dissipation (Max) | 96W (Tc) | |
| Package / Case | TO-247-3 | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 200°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 133 pF @ 1000 V | |
| Gate Charge (Qg) (Max) @ Vgs | 13.3 nC @ 20 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 20V | |
| Entworf fir Source Voltage (Vdss) | 1700 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 7A (Tc) | |
| Basis Produktnummer | SCT1000 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics SCT1000N170.
| Produktiounsattriff |  |
|
 |
|
|---|---|---|---|---|
| Part Number | SCT1000N170 | SCT12A0DHKR | SCT100N65G2A | SCT070HU120G3AG |
| Hiersteller | STMicroelectronics | SCT | STMicroelectronics | |
| Package / Case | TO-247-3 | - | - | - |
| Rds On (Max) @ Id, Vgs | 1.3Ohm @ 3A, 20V | - | - | - |
| Vgs (th) (Max) @ Id | 3.5V @ 1mA | - | - | - |
| Package protegéieren | Tube | - | - | - |
| Vgs (Max) | +22V, -10V | - | - | - |
| Serie | - | - | - | - |
| Input Capacitance (Ciss) (Max) @ Vds | 133 pF @ 1000 V | - | - | - |
| Entworf fir Source Voltage (Vdss) | 1700 V | - | - | - |
| Basis Produktnummer | SCT1000 | - | - | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 7A (Tc) | - | - | - |
| Technologie | SiCFET (Silicon Carbide) | - | - | - |
| Gate Charge (Qg) (Max) @ Vgs | 13.3 nC @ 20 V | - | - | - |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 96W (Tc) | - | - | - |
| Operatioun Temperatur | -55°C ~ 200°C (TJ) | - | - | - |
| Mounting Type | Through Hole | - | - | - |
| Fuert Volt (Max Rds On, Min Rds On) | 20V | - | - | - |
| FET Typ | N-Channel | - | - | - |
| Supplier Device Package | HiP247™ | - | - | - |
Eroflueden SCT1000N170 PDF DataDhusts an STMicroelectronics Dokumentatioun fir SCT1000N170 - STMicroelectronics.
SCT12A0DHKRSCTSCT100N65G2ASTMicroelectronicsSCT070HU120G3AGSCT12A2DHKRSCTSCT125K122A3B23SCT125K122A3B28SCT105K202A3S25CDESCT1515AXSINGURESCT10N120STMicroelectronicsSCT12A1DHKRSCTSCT105K162A3B38SCT12A0DHRKSCTSCT105K122A3B28SCT155K122A3B28
SCT1008CMT3R2Gonsemi1 TMP DIO MON/SMBUS 4CHSCT12A0SCTSCT155K162A3B38SCT1527SCL| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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