MJD122T4 Tech Spezifikatioune
STMicroelectronics - MJD122T4 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - MJD122T4
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | STMicroelectronics | |
| Voltage - Collector Emitter Breakdown (Max) | 100 V | |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 80mA, 8A | |
| Transistor Type | NPN - Darlington | |
| Supplier Device Package | DPAK | |
| Serie | - | |
| Power - Max | 20 W | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tape & Reel (TR) | |
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Frequenz - Iwwergang | - | |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 1000 @ 4A, 4V | |
| Aktuell - Kollektorat Cutoff (Max) | 10µA | |
| Aktuell - Sammler (Ic) (Max) | 8 A | |
| Basis Produktnummer | MJD122 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics MJD122T4.
| Produktiounsattriff |  |
 |
|
|
|---|---|---|---|---|
| Part Number | MJD122T4 | MJD122-1G | MJD122T4G | MJD122G |
| Hiersteller | STMicroelectronics | onsemi | onsemi | onsemi |
| Basis Produktnummer | MJD122 | MJD122 | MJD122 | MJD122 |
| DC Aktuelle Verstärker (hFE) (Min) @ Ic, Vce | 1000 @ 4A, 4V | 1000 @ 4A, 4V | 1000 @ 4A, 4V | 1000 @ 4A, 4V |
| Aktuell - Kollektorat Cutoff (Max) | 10µA | 10µA | 10µA | 10µA |
| Serie | - | - | - | - |
| Aktuell - Sammler (Ic) (Max) | 8 A | 8 A | 8 A | 8 A |
| Transistor Type | NPN - Darlington | NPN - Darlington | NPN - Darlington | NPN - Darlington |
| Operatioun Temperatur | 150°C (TJ) | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) |
| Voltage - Collector Emitter Breakdown (Max) | 100 V | 100 V | 100 V | 100 V |
| Power - Max | 20 W | 1.75 W | 1.75 W | 20 W |
| Package protegéieren | Tape & Reel (TR) | Tube | Tape & Reel (TR) | Tube |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 80mA, 8A | 4V @ 80mA, 8A | 4V @ 80mA, 8A | 4V @ 80mA, 8A |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | DPAK | DPAK | DPAK | DPAK |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Frequenz - Iwwergang | - | 4MHz | 4MHz | 4MHz |
Eroflueden MJD122T4 PDF DataDhusts an STMicroelectronics Dokumentatioun fir MJD122T4 - STMicroelectronics.
MJD122CJ
MJD127-1GAMI Semiconductor/onsemiMJD122-1GonsemiTRANS NPN DARL 100V 8A DPAKMJD122 80/GMJD122T4GonsemiTRANS NPN DARL 100V 8A DPAKMJD122T4G MOSAMI Semiconductor/onsemi
MJD122T4 MOSSTMicroelectronicsMJD122GonsemiTRANS NPN DARL 100V 8A DPAKMJD122T4G/J122GAMI Semiconductor/onsemiMJD122 MOSAMI Semiconductor/onsemi
MJD117TFFairchild SemiconductorPOWER BIPOLAR TRANSISTOR, 2A, 10
MJD122TFonsemiTRANS NPN DARL 100V 8A DPAKMJD121E300NAMJD122T4onsemiTRANS DARL NPN 8A 100V DPAKMJD122DTT4STMicroelectronicsMJD127onsemiTRANS DARL PNP 8A 100V DPAKMJD127 MOSAMI Semiconductor/onsemiMJD122/127AMI Semiconductor/onsemi| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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