UPA2825T1S-E2-AT Tech Spezifikatioune
Renesas Electronics America Inc - UPA2825T1S-E2-AT technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Renesas Electronics America Inc - UPA2825T1S-E2-AT
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Renesas Electronics Corporation | |
| Vgs (th) (Max) @ Id | - | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-HWSON (3.3x3.3) | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 4.6mOhm @ 24A, 10V | |
| Power Dissipation (Max) | 1.5W (Ta), 16.5W (Tc) | |
| Package / Case | 8-PowerWDFN | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 10 V | |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 30 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 24A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Renesas Electronics America Inc UPA2825T1S-E2-AT.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | UPA2825T1S-E2-AT | UPA2820T1S-E2-AT | UPA2826T1S-E2-AT | UPA2822T1L-E1-AT |
| Hiersteller | Renesas Electronics America Inc | Renesas Electronics America Inc | Renesas Electronics America Inc | Renesas Electronics America Inc |
| Power Dissipation (Max) | 1.5W (Ta), 16.5W (Tc) | 1.5W (Ta), 16W (Tc) | 20W (Ta) | 1.5W (Ta) |
| Supplier Device Package | 8-HWSON (3.3x3.3) | 8-HWSON (3.3x3.3) | 8-HWSON (3.3x3.3) | 8-HWSON (3.3x3.3) |
| Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | 150°C | 150°C (TJ) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 24A (Tc) | 22A (Tc) | 27A (Ta) | 34A (Tc) |
| FET Feature | - | - | - | - |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 10 V | 50 nC @ 10 V | 37 nC @ 4 V | 83 nC @ 10 V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Package / Case | 8-PowerWDFN | 8-PowerWDFN | 8-PowerWDFN | 8-PowerWDFN |
| Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 20 V | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 10 V | 2330 pF @ 10 V | 3610 pF @ 10 V | 4660 pF @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±12V | ±20V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Rds On (Max) @ Id, Vgs | 4.6mOhm @ 24A, 10V | 5.3mOhm @ 22A, 10V | 4.3mOhm @ 13.5A, 8V | 2.6mOhm @ 34A, 10V |
| Vgs (th) (Max) @ Id | - | - | 1.5V @ 1mA | - |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 2.5V, 8V | 4.5V, 10V |
| Serie | - | - | - | - |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Eroflueden UPA2825T1S-E2-AT PDF DataDhusts an Renesas Electronics America Inc Dokumentatioun fir UPA2825T1S-E2-AT - Renesas Electronics America Inc.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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