RJK5015DPM-00#T1 Tech Spezifikatioune
Renesas Electronics America Inc - RJK5015DPM-00#T1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Renesas Electronics America Inc - RJK5015DPM-00#T1
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Renesas Electronics Corporation | |
Vgs (th) (Max) @ Id | - | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-3PFM | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 240mOhm @ 12.5A, 10V | |
Power Dissipation (Max) | 60W (Tc) | |
Package / Case | TO-220-3 Full Pack | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 500 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 25A (Ta) | |
Basis Produktnummer | RJK5015 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Renesas Electronics America Inc RJK5015DPM-00#T1.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | RJK5015DPM-00#T1 | RJK5006DPD-10-J2 | RJK5026DPP | RJK5009DPP |
Hiersteller | Renesas Electronics America Inc | Renesas Electronics Corporation | Renesas Electronics Corporation | Renesas Electronics Corporation |
Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 25 V | - | - | - |
Vgs (Max) | ±30V | - | - | - |
Vgs (th) (Max) @ Id | - | - | - | - |
FET Typ | N-Channel | - | - | - |
Technologie | MOSFET (Metal Oxide) | - | - | - |
Basis Produktnummer | RJK5015 | - | - | - |
Entworf fir Source Voltage (Vdss) | 500 V | - | - | - |
Serie | - | - | - | - |
Package protegéieren | Tube | - | - | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 25A (Ta) | - | - | - |
Package / Case | TO-220-3 Full Pack | - | - | - |
Rds On (Max) @ Id, Vgs | 240mOhm @ 12.5A, 10V | - | - | - |
Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 10 V | - | - | - |
Supplier Device Package | TO-3PFM | - | - | - |
Power Dissipation (Max) | 60W (Tc) | - | - | - |
Operatioun Temperatur | 150°C (TJ) | - | - | - |
FET Feature | - | - | - | - |
Fuert Volt (Max Rds On, Min Rds On) | 10V | - | - | - |
Mounting Type | Through Hole | - | - | - |
Eroflueden RJK5015DPM-00#T1 PDF DataDhusts an Renesas Electronics America Inc Dokumentatioun fir RJK5015DPM-00#T1 - Renesas Electronics America Inc.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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