RJK1052DPB-00#J5 Tech Spezifikatioune
Renesas Electronics America Inc - RJK1052DPB-00#J5 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Renesas Electronics America Inc - RJK1052DPB-00#J5
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Renesas Electronics Corporation | |
Vgs (th) (Max) @ Id | - | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | LFPAK | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 20mOhm @ 10A, 10V | |
Power Dissipation (Max) | 55W (Tc) | |
Package / Case | SC-100, SOT-669 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 4160 pF @ 10 V | |
Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 4.5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 20A (Ta) | |
Basis Produktnummer | RJK1052 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Renesas Electronics America Inc RJK1052DPB-00#J5.
Produktiounsattriff | ||||
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Part Number | RJK1052DPB-00#J5 | RJK1053DPB-WS#J5 | RJK1028DNS-00#J5 | RJK1056DPB-00#J5 |
Hiersteller | Renesas Electronics America Inc | Renesas Electronics America Inc | Renesas Electronics America Inc | Renesas Electronics America Inc |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 20A (Ta) | - | 4A (Ta) | 25A (Ta) |
FET Typ | N-Channel | - | N-Channel | N-Channel |
Package protegéieren | Tape & Reel (TR) | Tray | Tape & Reel (TR) | Tape & Reel (TR) |
Vgs (Max) | ±20V | - | +12V, -5V | ±20V |
Operatioun Temperatur | 150°C (TJ) | - | 150°C | 150°C (TJ) |
Power Dissipation (Max) | 55W (Tc) | - | 10W (Ta) | 65W (Tc) |
Mounting Type | Surface Mount | - | Surface Mount | Surface Mount |
Entworf fir Source Voltage (Vdss) | 100 V | - | 100 V | 100 V |
Basis Produktnummer | RJK1052 | - | - | RJK1056 |
FET Feature | - | - | - | - |
Serie | - | * | - | - |
Input Capacitance (Ciss) (Max) @ Vds | 4160 pF @ 10 V | - | 450 pF @ 10 V | 3000 pF @ 10 V |
Vgs (th) (Max) @ Id | - | - | 2.5V @ 1mA | - |
Rds On (Max) @ Id, Vgs | 20mOhm @ 10A, 10V | - | 165mOhm @ 2A, 10V | 14mOhm @ 12.5A, 10V |
Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 4.5 V | - | 3.7 nC @ 4.5 V | 41 nC @ 10 V |
Package / Case | SC-100, SOT-669 | - | 8-PowerWDFN | SC-100, SOT-669 |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | - | 4.5V, 10V | 10V |
Supplier Device Package | LFPAK | - | 8-HWSON (3.3x3.3) | LFPAK |
Technologie | MOSFET (Metal Oxide) | - | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Eroflueden RJK1052DPB-00#J5 PDF DataDhusts an Renesas Electronics America Inc Dokumentatioun fir RJK1052DPB-00#J5 - Renesas Electronics America Inc.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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