RJK0851DPB-00#J5 Tech Spezifikatioune
Renesas Electronics America Inc - RJK0851DPB-00#J5 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Renesas Electronics America Inc - RJK0851DPB-00#J5
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Renesas Electronics Corporation | |
Vgs (th) (Max) @ Id | 2.5V @ 1mA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | LFPAK | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 23mOhm @ 10A, 10V | |
Power Dissipation (Max) | 45W (Tc) | |
Package / Case | SC-100, SOT-669 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 2050 pF @ 10 V | |
Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 80 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 20A (Ta) | |
Basis Produktnummer | RJK0851 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Renesas Electronics America Inc RJK0851DPB-00#J5.
Produktiounsattriff | ||||
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Part Number | RJK0851DPB-00#J5 | RJK0853DPB-00#J5 | RJK0655DPB-00#J5 | RJK0852DPB-00#J5 |
Hiersteller | Renesas Electronics America Inc | Renesas Electronics America Inc | Renesas Electronics America Inc | Renesas Electronics America Inc |
Entworf fir Source Voltage (Vdss) | 80 V | 80 V | 60 V | 80 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Power Dissipation (Max) | 45W (Tc) | 65W (Tc) | 60W (Tc) | 55W (Tc) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Basis Produktnummer | RJK0851 | RJK0853 | RJK0655 | - |
Supplier Device Package | LFPAK | LFPAK | LFPAK | LFPAK |
Rds On (Max) @ Id, Vgs | 23mOhm @ 10A, 10V | 8mOhm @ 20A, 10V | 6.7mOhm @ 17.5A, 10V | 12mOhm @ 15A, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2050 pF @ 10 V | 6170 pF @ 10 V | 2550 pF @ 10 V | 4150 pF @ 10 V |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 20A (Ta) | 40A (Ta) | 35A (Ta) | 30A (Ta) |
Vgs (th) (Max) @ Id | 2.5V @ 1mA | - | - | - |
Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V | 40 nC @ 4.5 V | 35 nC @ 10 V | 28 nC @ 4.5 V |
Serie | - | - | - | - |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 10V | 4.5V, 10V |
FET Feature | - | - | - | - |
Package / Case | SC-100, SOT-669 | SC-100, SOT-669 | SC-100, SOT-669 | SC-100, SOT-669 |
Eroflueden RJK0851DPB-00#J5 PDF DataDhusts an Renesas Electronics America Inc Dokumentatioun fir RJK0851DPB-00#J5 - Renesas Electronics America Inc.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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