RJK0330DPB-01#J0 Tech Spezifikatioune
Renesas Electronics America Inc - RJK0330DPB-01#J0 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Renesas Electronics America Inc - RJK0330DPB-01#J0
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Renesas Electronics Corporation | |
Vgs (th) (Max) @ Id | - | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | LFPAK | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 2.7mOhm @ 22.5A, 10V | |
Power Dissipation (Max) | 55W (Tc) | |
Package / Case | SC-100, SOT-669 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 4300 pF @ 10 V | |
Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 4.5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 45A (Ta) | |
Basis Produktnummer | RJK0330 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Renesas Electronics America Inc RJK0330DPB-01#J0.
Produktiounsattriff | ||||
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Part Number | RJK0330DPB-01#J0 | RJK0332DPB-01#J0 | RJK0346DPA-00#J0 | RJK0331DPB-01#J0 |
Hiersteller | Renesas Electronics America Inc | Renesas Electronics America Inc | Renesas Electronics America Inc | Renesas Electronics America Inc |
Input Capacitance (Ciss) (Max) @ Vds | 4300 pF @ 10 V | 2180 pF @ 10 V | 7650 pF @ 10 V | 3380 pF @ 10 V |
Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Bulk | Bulk |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | - | - |
Supplier Device Package | LFPAK | LFPAK | 8-WPAK (3) | LFPAK |
Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 4.5 V | 14 nC @ 4.5 V | 49 nC @ 4.5 V | 22 nC @ 4.5 V |
Rds On (Max) @ Id, Vgs | 2.7mOhm @ 22.5A, 10V | 4.7mOhm @ 17.5A, 10V | 2mOhm @ 32.5A, 10V | 3.4mOhm @ 20A, 10V |
Power Dissipation (Max) | 55W (Tc) | 45W (Tc) | 65W (Tc) | 50W (Tc) |
Basis Produktnummer | RJK0330 | RJK0332 | - | - |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 45A (Ta) | 35A (Ta) | 65A (Ta) | 40A (Ta) |
Vgs (Max) | ±20V | ±20V | - | - |
Serie | - | - | - | - |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 30 V | 30 V |
FET Feature | - | - | - | - |
Package / Case | SC-100, SOT-669 | SC-100, SOT-669 | 8-PowerWDFN | SC-100, SOT-669 |
Vgs (th) (Max) @ Id | - | 2.5V @ 1mA | - | - |
Eroflueden RJK0330DPB-01#J0 PDF DataDhusts an Renesas Electronics America Inc Dokumentatioun fir RJK0330DPB-01#J0 - Renesas Electronics America Inc.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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