RBN75H65T1FPQ-A0#CB0 Tech Spezifikatioune
Renesas Electronics America Inc - RBN75H65T1FPQ-A0#CB0 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Renesas Electronics America Inc - RBN75H65T1FPQ-A0#CB0
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Renesas Electronics Corporation | |
| Voltage - Collector Emitter Breakdown (Max) | 650 V | |
| Vce (on) (Max) @ Vge, Ic | 2V @ 15V, 75A | |
| Test Condition | 400V, 75A, 16Ohm, 15V | |
| Td (on / off) @ 25 ° C | 29ns/113ns | |
| Energie schalten | 1.6mJ (on), 1mJ (off) | |
| Supplier Device Package | TO-247A | |
| Serie | - | |
| Reverse Recovery Time (trr) | 72 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Power - Max | 312 W | |
| Package / Case | TO-247-3 | |
| Package protegéieren | Tube | |
| Operatioun Temperatur | 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Type | Standard | |
| IGBT Type | Trench | |
| Gate Charge | 54 nC | |
| Aktuell - Sammler (Ic) (Max) | 150 A |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Renesas Electronics America Inc RBN75H65T1FPQ-A0#CB0.
| Produktiounsattriff |  |
 |
 |
 |
|---|---|---|---|---|
| Part Number | RBN75H65T1FPQ-A0#CB0 | IRG4IBC10UD | IXSK40N60CD1 | IRG4RC20FTRL |
| Hiersteller | Renesas Electronics America Inc | Infineon Technologies | IXYS | Infineon Technologies |
| Package protegéieren | Tube | Tube | Tube | Tape & Reel (TR) |
| Test Condition | 400V, 75A, 16Ohm, 15V | 480V, 5A, 100Ohm, 15V | 480V, 40A, 2.7Ohm, 15V | 480V, 12A, 50Ohm, 15V |
| Vce (on) (Max) @ Vge, Ic | 2V @ 15V, 75A | 2.6V @ 15V, 5A | 2.5V @ 15V, 40A | 2.1V @ 15V, 12A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V | 600 V | 600 V | 600 V |
| Input Type | Standard | Standard | Standard | Standard |
| Power - Max | 312 W | 25 W | 280 W | 66 W |
| Energie schalten | 1.6mJ (on), 1mJ (off) | 140µJ (on), 120µJ (off) | 1mJ (off) | 190µJ (on), 920µJ (off) |
| Reverse Recovery Time (trr) | 72 ns | 28 ns | 35 ns | - |
| Mounting Type | Through Hole | Through Hole | Through Hole | Surface Mount |
| Aktuell - Sammler (Ic) (Max) | 150 A | 6.8 A | 75 A | 22 A |
| Td (on / off) @ 25 ° C | 29ns/113ns | 40ns/87ns | 50ns/70ns | 26ns/194ns |
| Operatioun Temperatur | 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Serie | - | - | - | - |
| Package / Case | TO-247-3 | TO-220-3 Full Pack | TO-264-3, TO-264AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | TO-247A | PG-TO220-FP | TO-264AA (IXSK) | D-Pak |
| Gate Charge | 54 nC | 15 nC | 190 nC | 27 nC |
| IGBT Type | Trench | - | - | - |
Eroflueden RBN75H65T1FPQ-A0#CB0 PDF DataDhusts an Renesas Electronics America Inc Dokumentatioun fir RBN75H65T1FPQ-A0#CB0 - Renesas Electronics America Inc.
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IXGH24N60CIXYSIGBT 600V 48A 150W TO247AD
FGHL75T65MQDonsemiIGBT 650V 75A TO247IXGH25N160IXYSIGBT 1600V 75A 300W TO247IXGH17N100U1IXYSIGBT 1000V 34A 150W TO247ADTIG030TS-TL-EonsemiLIGHT-CONTROLLING FLASHIXSH30N60CIXYSIGBT 600V 55A 200W TO247AD
STGW40NC60WSTMicroelectronicsIGBT 600V 70A 250W TO247RBN40H65T1FPQ-A0#CB0Renesas
APT75GN60LDQ3GMicrochip TechnologyIGBT 600V 155A 536W TO264
IRG4BC40KInfineon TechnologiesIGBT 600V 42A 160W TO220ABRBN40H125S1FPQ-A0#CB0Renesas Electronics America IncABU / IGBTFGB7N60UNDFFairchild SemiconductorINSULATED GATE BIPOLAR TRANSISTO| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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