NP90N03VLG-E1-AY Tech Spezifikatioune
Renesas Electronics America Inc - NP90N03VLG-E1-AY technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Renesas Electronics America Inc - NP90N03VLG-E1-AY
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Renesas Electronics Corporation | |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-252 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 3.2mOhm @ 45A, 10V | |
Power Dissipation (Max) | 1.2W (Ta), 105W (Tc) | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 7500 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 135 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 90A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Renesas Electronics America Inc NP90N03VLG-E1-AY.
Produktiounsattriff | ||||
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Part Number | NP90N03VLG-E1-AY | NP90N04VUG-E1-AY | NP90N03VHG-E1-AY | NP90N04VLK-E1-AY |
Hiersteller | Renesas Electronics America Inc | Renesas | Renesas Electronics America Inc | Renesas Electronics America Inc |
Entworf fir Source Voltage (Vdss) | 30 V | 40 V | 30 V | 40 V |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 10V | 10V | 4.5V, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 7500 pF @ 25 V | 7500 pF @ 25 V | 7500 pF @ 25 V | 5700 pF @ 25 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 90A (Tc) | 90A (Tc) | 90A (Tc) | 90A (Tc) |
Supplier Device Package | TO-252 | TO-252 (MP-3ZP) | TO-252 | TO-252 (MP-3ZP) |
Rds On (Max) @ Id, Vgs | 3.2mOhm @ 45A, 10V | 4mOhm @ 45A, 10V | 3.2mOhm @ 45A, 10V | 2.8mOhm @ 45A, 10V |
Gate Charge (Qg) (Max) @ Vgs | 135 nC @ 10 V | 135 nC @ 10 V | 135 nC @ 10 V | 102 nC @ 10 V |
Power Dissipation (Max) | 1.2W (Ta), 105W (Tc) | 1.2W (Ta), 105W (Tc) | 1.2W (Ta), 105W (Tc) | 1.2W (Ta), 147W (Tc) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
FET Feature | - | - | - | - |
Operatioun Temperatur | 175°C (TJ) | 175°C | 175°C (TJ) | 175°C |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Package protegéieren | Tape & Reel (TR) | Bulk | Tape & Reel (TR) | Tape & Reel (TR) |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | 4V @ 250µA | 4V @ 250µA | 2.5V @ 250µA |
Serie | - | Automotive, AEC-Q101 | - | - |
Eroflueden NP90N03VLG-E1-AY PDF DataDhusts an Renesas Electronics America Inc Dokumentatioun fir NP90N03VLG-E1-AY - Renesas Electronics America Inc.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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