NP55N055SDG-E1-AY Tech Spezifikatioune
Renesas Electronics America Inc - NP55N055SDG-E1-AY technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Renesas Electronics America Inc - NP55N055SDG-E1-AY
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Renesas Electronics Corporation | |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-252 (MP-3ZK) | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 9.5mOhm @ 28A, 10V | |
Power Dissipation (Max) | 1.2W (Ta), 77W (Tc) | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 4800 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 96 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 55 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 55A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Renesas Electronics America Inc NP55N055SDG-E1-AY.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | NP55N055SDG-E1-AY | NP55N055SUG-E1-AY | NP55N03SUG-E1-AY | NP55N04SUG MOS |
Hiersteller | Renesas Electronics America Inc | Renesas Electronics America Inc | Renesas Electronics America Inc | Renesas Electronics Corporation |
Gate Charge (Qg) (Max) @ Vgs | 96 nC @ 10 V | 90 nC @ 10 V | 93 nC @ 10 V | - |
Vgs (Max) | ±20V | ±20V | ±20V | - |
Power Dissipation (Max) | 1.2W (Ta), 77W (Tc) | 1.2W (Ta), 77W (Tc) | 1.2W (Ta), 77W (Tc) | - |
Input Capacitance (Ciss) (Max) @ Vds | 4800 pF @ 25 V | 5250 pF @ 25 V | 5300 pF @ 25 V | - |
Supplier Device Package | TO-252 (MP-3ZK) | TO-252 (MP-3ZK) | TO-252 (MP-3ZK) | - |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - |
Entworf fir Source Voltage (Vdss) | 55 V | 55 V | 30 V | - |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 10V | 10V | - |
Operatioun Temperatur | 175°C (TJ) | 175°C (TJ) | 175°C (TJ) | - |
FET Typ | N-Channel | N-Channel | N-Channel | - |
Rds On (Max) @ Id, Vgs | 9.5mOhm @ 28A, 10V | 10mOhm @ 28A, 10V | 5mOhm @ 28A, 10V | - |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | - |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
Serie | - | - | - | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 55A (Tc) | 55A (Tc) | 55A (Tc) | - |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | - | 4V @ 250µA | - |
FET Feature | - | - | - | - |
Eroflueden NP55N055SDG-E1-AY PDF DataDhusts an Renesas Electronics America Inc Dokumentatioun fir NP55N055SDG-E1-AY - Renesas Electronics America Inc.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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