NP15P06SLG-E1-AY Tech Spezifikatioune
Renesas Electronics America Inc - NP15P06SLG-E1-AY technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Renesas Electronics America Inc - NP15P06SLG-E1-AY
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Renesas Electronics Corporation | |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-252 (MP-3ZK) | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 70mOhm @ 7.5A, 10V | |
Power Dissipation (Max) | 1.2W (Ta), 30W (Tc) | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 10 V | |
Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 60 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 15A (Ta) | |
Basis Produktnummer | NP15P06 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Renesas Electronics America Inc NP15P06SLG-E1-AY.
Produktiounsattriff | ||||
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Part Number | NP15P06SLG-E1-AY | NP160N04TDG-E1-AY | NP161N04TUG-E1-AY | NP15P04SLG-E1-AY |
Hiersteller | Renesas Electronics America Inc | Renesas Electronics America Inc | Renesas Electronics America Inc | Renesas Electronics America Inc |
Supplier Device Package | TO-252 (MP-3ZK) | TO-263-7 | TO-263-7 | TO-252 (MP-3ZK) |
Power Dissipation (Max) | 1.2W (Ta), 30W (Tc) | 1.8W (Ta), 220W (Tc) | 1.8W (Ta), 250W (Tc) | 1.2W (Ta), 30W (Tc) |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Bulk | Tape & Reel (TR) |
FET Typ | P-Channel | N-Channel | N-Channel | P-Channel |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | 2.5V @ 250µA | 4V @ 250µA | 2.5V @ 250µA |
Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 10 V | 15750 pF @ 25 V | 20.25 pF @ 25 V | 1100 pF @ 10 V |
Entworf fir Source Voltage (Vdss) | 60 V | 40 V | 40 V | 40 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-263-7, D²Pak (6 Leads + Tab) | TO-263-7, D²Pak (6 Leads + Tab) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Vgs (Max) | ±20V | ±20V | - | ±20V |
Serie | - | - | - | - |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | - | 4.5V, 10V |
Operatioun Temperatur | 175°C (TJ) | 175°C (TJ) | 175°C (TJ) | 175°C (TJ) |
Basis Produktnummer | NP15P06 | - | - | NP15P04 |
Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V | 270 nC @ 10 V | 345 nC @ 10 V | 23 nC @ 10 V |
Rds On (Max) @ Id, Vgs | 70mOhm @ 7.5A, 10V | 2mOhm @ 80A, 10V | 1.8mOhm @ 80A, 10V | 40mOhm @ 7.5A, 10V |
FET Feature | - | - | - | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 15A (Ta) | 160A (Ta) | 160A (Tc) | 15A (Ta) |
Eroflueden NP15P06SLG-E1-AY PDF DataDhusts an Renesas Electronics America Inc Dokumentatioun fir NP15P06SLG-E1-AY - Renesas Electronics America Inc.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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