HAT2173H-EL-E Tech Spezifikatioune
Renesas Electronics America Inc - HAT2173H-EL-E technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Renesas Electronics America Inc - HAT2173H-EL-E
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Renesas Electronics Corporation | |
Vgs (th) (Max) @ Id | 6V @ 20mA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | LFPAK | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 15mOhm @ 12.5A, 10V | |
Power Dissipation (Max) | 30W (Tc) | |
Package / Case | SC-100, SOT-669 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 4350 pF @ 10 V | |
Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 8V, 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 25A (Ta) | |
Basis Produktnummer | HAT2173 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Renesas Electronics America Inc HAT2173H-EL-E.
Produktiounsattriff | ||||
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Part Number | HAT2173H-EL-E | HAT2172N-EL-E | HAT2175H-EL-E | HAT2170H-EL-E |
Hiersteller | Renesas Electronics America Inc | Renesas Electronics America Inc | Renesas Electronics America Inc | Renesas Electronics America Inc |
Supplier Device Package | LFPAK | 8-LFPAK-iV | LFPAK | LFPAK |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 25A (Ta) | 30A (Ta) | 15A (Ta) | 45A (Ta) |
Power Dissipation (Max) | 30W (Tc) | 20W (Tc) | 15W (Tc) | 30W (Tc) |
Basis Produktnummer | HAT2173 | - | HAT2175 | HAT2170 |
Vgs (Max) | ±20V | - | ±20V | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 4350 pF @ 10 V | 2420 pF @ 10 V | 1445 pF @ 10 V | 4650 pF @ 10 V |
Package protegéieren | Tape & Reel (TR) | Bulk | Tape & Reel (TR) | Tape & Reel (TR) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Rds On (Max) @ Id, Vgs | 15mOhm @ 12.5A, 10V | 7.8mOhm @ 15A, 10V | 42mOhm @ 7.5A, 10V | 4.2mOhm @ 22.5A, 10V |
Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 10 V | 32 nC @ 10 V | 21 nC @ 10 V | 62 nC @ 10 V |
FET Feature | - | - | - | - |
Package / Case | SC-100, SOT-669 | 8-PowerSOIC (0.154", 3.90mm Width) | SC-100, SOT-669 | SC-100, SOT-669 |
Fuert Volt (Max Rds On, Min Rds On) | 8V, 10V | - | 8V, 10V | 7V, 10V |
Serie | - | - | - | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Entworf fir Source Voltage (Vdss) | 100 V | 40 V | 100 V | 40 V |
Vgs (th) (Max) @ Id | 6V @ 20mA | - | - | 3V @ 1mA |
Eroflueden HAT2173H-EL-E PDF DataDhusts an Renesas Electronics America Inc Dokumentatioun fir HAT2173H-EL-E - Renesas Electronics America Inc.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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