2SK3354-AZ Tech Spezifikatioune
Renesas - 2SK3354-AZ technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Renesas - 2SK3354-AZ
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Renesas Electronics Corporation | |
| Vgs (th) (Max) @ Id | 2.5V @ 1mA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220AB | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 42A, 10V | |
| Power Dissipation (Max) | 1.5W (Ta), 100W (Tc) | |
| Package / Case | TO-220-3 | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | 150°C | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 6300 pF @ 10 V | |
| Gate Charge (Qg) (Max) @ Vgs | 106 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4V, 10V | |
| Entworf fir Source Voltage (Vdss) | 60 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 83A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Renesas 2SK3354-AZ.
| Produktiounsattriff |  |
 |
|
|
|---|---|---|---|---|
| Part Number | 2SK3354-AZ | 2SK3348CNTL-E | 2SK3357-A | 2SK3365-Z-E1 |
| Hiersteller | Renesas | Renesas Electronics America Inc | Renesas | NEC |
| Input Capacitance (Ciss) (Max) @ Vds | 6300 pF @ 10 V | - | 9800 pF @ 10 V | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 83A (Tc) | - | 75A (Ta) | - |
| FET Typ | N-Channel | - | N-Channel | - |
| Supplier Device Package | TO-220AB | - | TO-3P (MP-88) | - |
| Package / Case | TO-220-3 | - | TO-3P-3, SC-65-3 | - |
| Serie | - | * | - | - |
| Package protegéieren | Bulk | Bulk | Bulk | - |
| Vgs (th) (Max) @ Id | 2.5V @ 1mA | - | 2.5V @ 1mA | - |
| Fuert Volt (Max Rds On, Min Rds On) | 4V, 10V | - | 4V, 10V | - |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 42A, 10V | - | 5.8mOhm @ 38A, 10V | - |
| Operatioun Temperatur | 150°C | - | 150°C | - |
| Technologie | MOSFET (Metal Oxide) | - | MOSFET (Metal Oxide) | - |
| Power Dissipation (Max) | 1.5W (Ta), 100W (Tc) | - | 3W (Ta), 150W (Tc) | - |
| Entworf fir Source Voltage (Vdss) | 60 V | - | 60 V | - |
| FET Feature | - | - | - | - |
| Gate Charge (Qg) (Max) @ Vgs | 106 nC @ 10 V | - | 170 nC @ 10 V | - |
| Mounting Type | Through Hole | - | Through Hole | - |
| Vgs (Max) | ±20V | - | ±20V | - |
Eroflueden 2SK3354-AZ PDF DataDhusts an Renesas Dokumentatioun fir 2SK3354-AZ - Renesas.
2SK3348CNTL-ERenesas Electronics America IncN-CHANNEL MOSFET2SK3365-Z-E1NEC2SK3362-01VBSEMI
2SK3351-TL-EAMI Semiconductor/onsemi2SK3364-01FUJI2SK3354(03)-ZP-E1-AYRenesas Electronics Corporation2SK3348CNTLHITACHI2SK3353NEC2SK3349DNTRHITACHI2SK3354NEC2SK3356NEC2SK3349DN/TRHITACHI2SK3365-ZRENESA2SK3354(3)-ZP-E1-AY/JMRenesas Electronics Corporation2SK3355-Z-E1NEC2SK3365VBSEMI2SK3357-ARenesas2SK3357 - N-CHANNEL POWER MOSFET2SK3355VBSEMI| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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