2SK2857-T1-AZ Tech Spezifikatioune
Renesas - 2SK2857-T1-AZ technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Renesas - 2SK2857-T1-AZ
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Renesas Electronics Corporation | |
| Vgs (th) (Max) @ Id | 2V @ 1mA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | SC-62 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 2.5A, 10V | |
| Power Dissipation (Max) | 2W (Ta) | |
| Package / Case | TO-243AA | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | 150°C | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 265 pF @ 10 V | |
| Gate Charge (Qg) (Max) @ Vgs | 10.6 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4V, 10V | |
| Entworf fir Source Voltage (Vdss) | 60 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4A (Ta) |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | RoHS net konform |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | |
| Erreecht Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Renesas 2SK2857-T1-AZ.
| Produktiounsattriff |  |
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|
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|---|---|---|---|---|
| Part Number | 2SK2857-T1-AZ | 2SK2858-T1-A | 2SK2858(0)-T1-AT | 2SK2857C-T1-AZ |
| Hiersteller | Renesas | Renesas Electronics America Inc | Renesas | SK |
| Package protegéieren | Bulk | Bulk | Bulk | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4A (Ta) | 100mA (Ta) | - | - |
| Mounting Type | Surface Mount | Surface Mount | - | - |
| FET Feature | - | - | - | - |
| FET Typ | N-Channel | N-Channel | - | - |
| Gate Charge (Qg) (Max) @ Vgs | 10.6 nC @ 10 V | - | - | - |
| Supplier Device Package | SC-62 | SC-70-3, SSP, Miniature Mini Mold | - | - |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 2.5A, 10V | 5Ohm @ 10mA, 10V | - | - |
| Vgs (th) (Max) @ Id | 2V @ 1mA | 1.8V @ 10µA | - | - |
| Operatioun Temperatur | 150°C | - | - | - |
| Vgs (Max) | ±20V | - | - | - |
| Package / Case | TO-243AA | SC-70, SOT-323 | - | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - | - |
| Entworf fir Source Voltage (Vdss) | 60 V | 30 V | - | - |
| Serie | - | - | - | - |
| Fuert Volt (Max Rds On, Min Rds On) | 4V, 10V | - | - | - |
| Input Capacitance (Ciss) (Max) @ Vds | 265 pF @ 10 V | 9 pF @ 3 V | - | - |
| Power Dissipation (Max) | 2W (Ta) | - | - | - |
Eroflueden 2SK2857-T1-AZ PDF DataDhusts an Renesas Dokumentatioun fir 2SK2857-T1-AZ - Renesas.
2SK2857C-T1-AZSK2SK2857Renesas Electronics Corporation2SK2857-T1-ANEC2SK2858-T1-ARenesas Electronics America IncMOSFET N-CH 30V 100MA SC70-3 SSP2SK2858(0)-T1NEC2SK2858-T1/JMRenesas Electronics Corporation
2SK2855TAEC Product (Toshiba Electronic Devices and Stora2SK2858(0)-T1-ATRenesasD73032F16V - Power MOSFETs for A2SK2857-T1NEC2SK2857(0)-T1-AZNEC2SK2857(0)-T1NEC2SK2857CRenesas Electronics Corporation2SK2857C-T1Renesas Electronics Corporation2SK2851-90TZHITACHI2SK2850-01FUJI2SK2854TAEC Product (Toshiba Electronic Devices and Stora2SK2858-T1NEC2SK2858RENESA| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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